Search results for "transistor"

GaN Systems has shared the latest space applications and innovations enabled by gallium nitride (GaN) power semiconductors.

EPC has announced the introduction of a new family of radiation-hardened gallium nitride transistors and integrated circuits. With higher breakdown strength, faster switching speed, higher thermal conductivity and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices.

Measurement instrumentation from Tektronix and Keithley is being used by the Łukasiewicz - Institute of Microelectronics and Photonics to investigate the current and voltage characteristics of wide-bandgap semiconductors.

Microchip Technology has announced the qualification of itsM6 MRH25N12U3radiation-hardened 250V, 0.21 Ohm Rds(on), metal–oxide–semiconductor field-effect transistor (MOSFET) for commercial aerospace and defense space applications.

Nexperia have announced nine new power bipolar transistors, extending its portfolio of products in the thermally and electrically advantageous DPAK package to cover applications from 2A to 8A and from 45V up to 100V. The new MJD series parts are pin-to-pin compatible with other MJD devices in DPAK-package, and they also offer significant reliability benefits.

In this podcast we’ll be speaking to Dr. Paul Cain, strategy director at FlexEnable. Paul has 20 years’ experience in the flexible electronics and displays industries, in both technical and strategic management roles. He has taken new flexible display technologies from lab to fab to commercial product and has 25 patents relating to processes and architectures that enable the high-yield manufacture of flexible displays. Cain has a PhD ...

IceMOS Technology has announced the National Aeronautics and Space Administration (NASA) Goddard Space Flight Center (GSFC) has awarded it a project to begin work on developing a novel radiation-hard high voltage MOSFET power transistor.

Companies are continually looking for innovative ways to differentiate their products from the crowd and to make them more competitive in both cost and performance. They can embrace the advantages of higher integration through the increasing use of ASIC technology. Here, Richard Mount of Swindon Silicon Systems discusses how constant improvements in silicon design and manufacturing processes are opening the world ofApplication Specific Integrated...

GaNSystems, the specialist in GaN power semiconductors, has announced the expansion of its family of automotive-grade 650V transistors. TheGS-065-060-5-B-Ais a 60A, bottom-side cooled transistor developed for demanding high-power electric vehicle applications such as onboard chargers, traction inverters, and DC/DC converters.

The ADL9005 from Analog Devices is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), wideband, LNA that operates from 0.01 GHz to 26.5 GHz.