Search results for "transistor"
Cambridge GaN Devices debuts first commercial products
Cambridge GaN Devices debuts first commercial products at APEC with sustainability-driven 650 V ICeGaN H1 series
GaN FETs combine GaN HEMT and MOSFET
In stock at distributor Mouser Electronics are 650V 34A GaN FETsfrom Transphorm.
Believe in the weave
Researchers have used a drawing out process to create a lithium-ion battery fibre that can be coated and woven into fabric. It is waterproof, flexible and fire-resistant and is likely to weave its way into progressive design ideas, says Caroline Hayes
Graphene measurement international standard announced
Researchers from Graphene Flagship partner RWTH Aachen University and the Graphene Flagship Standardization Committee have pushed through a new IEC standard for assessing the strain uniformity of single-layer graphene using Raman spectroscopy.
Next-gen silicon carbide inverter launch
Electrification specialist, Equipmake, has launched a next-generation silicon carbide inverter, which can deliver a step-change in the performance of all electric vehicles.
Don’t sweat it: Smartwatch monitors stress levels
A UCLA research team has developed a smartwatch device that assesses cortisol levels found in sweat, offering wearers the ability to read and react to a biochemical indicator of stress.
Power system-in-package boost efficiency
The latest MasterGaN2 device from STMicroelectronics is an advanced power system-in-package that integrates a gate driver and two enhancement mode GaN transistors in asymmetrical half bridge configuration.
Low-ohmic snubber shunt for high pulse loads
In the case of fast switching operations in power electronics, such as in the automotive sector, voltage peaks can cause inductances, which can damage or destroy sensitive downstream components in the circuit.
Innoscience delivers 40V bi-directional GaN HEMT
Innoscience Technology, a company founded to create a global energy ecosystem based on high performance, cost-effective Gallium Nitride on Silicon (GaN-on-Si) power solutions, has announced the INN40W08, a 40V bi-directional GaN-on-Si enhancement mode high-electron-mobility-transistor (HEMT) for mobile devices, including laptops and cellular phones. The INN40W08 HEMT has been developed using the company's advanced InnoGaN technology which feature...
Silicon's potential breakthrough for microelectronics
At the heart of all of the technology that powers our world is one element: silicon. It has shaped the course of human evolution, forming integrated circuits and computer processors. But the dawn of a new era of advances in microelectronics may be on the horizon. It is no secret that silicon’s limitations are beginning to rear their heads in R&D labs, leaving many wondering what will replace it. Industrial Journalist Emily Newton discus...