Search results for "SiC"
SiC FETs suit 800 V bus architectures
In stock at distributor Mouser Electronics are the UF4C and UF4SC 1200 V silicon carbide (SiC) FETs from UnitedSiC (now Qorvo).
Power amplifier operates from 8 to 12 GHz
Availability and full design support capabilities for a new gallium nitride high-power amplifier from United Monolithic Semiconductors is announced by distributor Richardson RFPD.
The LIDAR sensor market estimated value of $5.6B By 2031
As per a report by Fact.MR, theglobal LiDAR sensor marketis anticipated to be valued at $5.6b by 2031, expanding at an impressive CAGR of 12.5% over the forecast period of 2021 to 2031.
2W Bipolar Output SMT DC-DC Converters Address High-Voltage Gate Driver Applications
Murata has announced the availability of its MGJ2 series, a new line of surface-mount DC-DC converters. Comprised of six models, the lightweight units each have a 2 W power rating and are supplied in a compact, low-profile form factor modules measuring just 19.49mm x 14.99mm x 4.39mm dimensions. Available in 12 V and 15 V voltage rails, they feature +15V/-5V, +15V/-9V, and +20V/-5V bipolar outputs. They are intended to accompany the IGBT and SiC-...
Biamp partners with ASMPT for next-gen component placement solution
ASMPT has announced that Beaverton, OR-based audiovisual OEM, Biamp, has selected the company’s SIPLACE SX component placement platform to accommodate explosive growth and product line expansion.
Infineon & Delta enable bidirectional charging at home
On hot summer days, the share of solar power in the energy mix reaches record levels. But what to do when the sun is not shining?
UnitedSiC (now Qorvo) announces 1200V Gen 4 SiC FETs
At PCIM Europe, Qorvo has announced a next-generation series of 1200V Silicon Carbide (SiC) Field Effect Transistors (FETs) with figures of merit in on-resistance.
UnitedSiC (now Qorvo) announces 1,200V Gen 4 SiC FETs
Qorvo (originally called UnitedSiC), a leading provider of core RF and power solutions, has announced a next-generation series of 1,200V SiC FETs (silicon carbide field effect transistors) with industry-leading figures of merit in on-resistance.
Fourth generation SiC FETs target 800V bus architectures
At PCIM Europe (10-12 May 2022) UnitedSiC announced the fourth generation of is 1200V SiC FETs based on its Cascode technology. It also announced that since its acquisition by Qorvo, the company will be known as Qorvo from the end of this year.
Infineon announces true 2kV class SiC MOSFET and roadmap for more
A low loss true 2kV SiC MOSFET was announced at PCIM Europe in Nuremberg. Based on Infineon’s CoolSiC technology, it is a new blocking voltage class, said Peter Friedrichs, vice president, silicon carbide at Infineon.