Search results for "transistor"
WIN Semiconductors releases 0.1µm GaAs pHEMT Technology
WIN Semiconductors, a compound semiconductor foundry, announces the release of its 0.1µm pHEMT technology, PP10-20.
SiC FETs package enhances efficiency
Mouser Electronics is now stocking the UJ4C/SC SiC FETs fromUnitedSiC (nowQorvo) in an industry-standard, D2PAK-7L surface-mount package.
Navitas GaNSense half-bridge power ICs
Navitas Semiconductor, pure-play next-gen power semiconductor company and industry specialist in GaN power ICs, has announced GaNSense half-bridge power ICs.
Magnachip unveils third-generation 200V MV MOSFETs
Magnachip Semiconductor Corporation (Magnachip) announced that the company has introduced its third- generation 200V Medium Voltage (MV) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) for Light Electric Vehicles (LEV) motor controllers and industrial power supplies.
Enhancement mode transistors in stock at Mouser
Mouser Electronics is now stocking theGS-065-0xx-2-L 650V enhancement mode transistorsfrom GaN Systems.
Magnachip unveils a new 650V IGBT for solar inverters
Magnachip Semiconductor Corporation announced today that the company has unveiled a new 650V insulated-gate bipolar transistor (IGBT) for solar inverters.
Toshiba launches third generation 650V SiC MOSFETs
Toshiba has launched a total of five new third-generation 650V SiC (silicon carbide) MOSFET, ormetal-oxide-semiconductor field-effect transistor, devices for industrial equipment.
CEA & partners present ‘powerful step towards industrialisation’ of linear Si quantum dot arrays
Silicon spin qubits represent one of the most promising avenues to achieving practical quantum computing, and new research into room-temperature parametric test procedures supports both their strong performance potential and the opportunities to ease their transition into manufacturing by leveraging well-characterized processes and materials from the semiconductor sector.
Renesas unveils Si IGBTs for electric vehicle inverters
Renesas Electronics Corporationhas announced the development of a new generation of Si-IGBTs (Silicon Insulated Gate Bipolar Transistors) which will be offered in a small footprint while providing low power losses.
No unpleasant surprises in ASIC development
When developing an application specific integrated circuit (ASIC) with a supplier, nothing is manufactured or physically measured before the end of the entire design process. So, how can you ensure that the finished product will fit seamlessly into your application without any unpleasant surprises?