Search results for "igbt"
Power integrated modules for solar inverters
ON Semiconductor will introduce Q0, Q1 and Q2 series of power modules for solar inverters rated up to over 100kVA along with NCD family of non-isolated high current IGBT drivers to achieve lower switching losses.
Would Apple change the power GaN world?
Over a long period, industrial companies followed up at a distance the development of GaN-based solutions mainly managed by R&D institutes and laboratories. Today the context has changed.
Cutting-Edge Power Solutions for Vehicle Electrification
ON Semiconductor announces Official Supplier relationship with Mercedes-AMG Petronas Motorsport and Mercedes EQ Formula E team that will extend their automotive power solutions leadership onto the highly competitive world stages of Formula One and Formula E. Building on the company’s technology, already utilised in the energy recovery pack that controls ignition and injection drivers of the Mercedes-AMG Petronas Motorsport race car, which h...
UnitedSiC introduces new UF3C “FAST” Silicon Carbide FET series
UnitedSiC launch its UF3C FAST series of 650 V and 1200 V high-performance silicon carbide FETs in a standard TO-247-3L package. The FAST Series offers increased switching speeds and higher efficiency levels than their existing UJC3 Series.
SiC comes of age for outdoor uses
Reiterating its focus on the automotive sector and commitment to SiC technology, Rohm Semiconductor has introduced a 1700V SiC power module.
Power modules deliver efficient, space saving solutions
Innovator in energy efficiency, ON Semiconductor, has launched new Power Modules that offer energy efficiency, reliability and performance in highly integrated and compact packaging, adding to the company’s portfolio of power semiconductor devices.
Partnership to create power solutions for vehicle electrification
A driver of energy efficient innovations, ON Semiconductor, has announced an Official Supplier relationship with Mercedes-AMG Petronas Motorsport and Mercedes EQ Formula E team that will extend their automotive power solutions leadership onto the highly competitive world stages of Formula One and Formula E.
High-performance silicon carbide FETs with increased switching speeds
Manufacturer of silicon carbide (SiC) power semiconductors, UnitedSiC, has announced the launch of its UF3C FAST series of 650 and 1200V high-performance silicon carbide FETs in a standard TO-247-3L package. The FAST Series offers increased switching speeds and higher efficiency levels than their existing UJC3 Series.
Grid tie inverter reference design for solar string inverter
This verified reference design provides an overview on how to implement a three-level three-phase SiC based DC:AC grid-tie inverter stage. Higher switching frequency of 50KHz reduces the size of magnetics for the filter design and enables higher power density.
Fly-buck power module ref. design for single IGBT driver bias
The PMP10654 reference design is a dual isolated outputs Fly-Buck power module for single IGBT driver bias. The two voltage rails are suitable for providing the positive and negative bias to an IGBT gate driver in motor drives for EV/HEV and industrial applications.