Search results for "mosfet"

Vishay Intertechnology has released new 20-V and 30-V p-channel TrenchFET power MOSFETs with a ±20-V gate source voltage that offer the industry’s lowest on-resistance for their device types in the SO-8 footprint.

Vishay Intertechnology has announced a 20-V n-channel power MOSFET plus Schottky diode. Featuring the 1.6-mm by 1.6-mm thermally enhanced PowerPAK SC-75 package, the SiB800EDK combines a Schottky diode with a low forward voltage of 0.32 V at 100 mA and a MOSFET with on-resistance ratings specified at gate drives down to 1.5 V.

Vishay Intertechnology has announced the industry’s first 190-V n-channel power MOSFET plus co-packaged 190-V power diode with a compact 2-mm by 2-mm footprint and an ultra-thin 0.75-mm profile. Offered in the PowerPAK SC-70 package, the SiA850DJ is also the industry’s first such device with an on-resistance rating at1.8-V VGS.

Vishay Intertechnology today released four new 600-V MOSFETs that extend its Super Junction FET technology to the TO-220, TO-220F, TO-247, and TO-263 packages.

Vishay Intertechnology, Inc. today released four new 500-V, 16-A n-channel power MOSFETs with ultra-low 0.38-Ω maximum on-resistance at a 10-V gate drive, and an improved gate charge of 68 nC, in the TO-220AB,TO-220 FULLPAK, D2PAK, and TO-247AC packages.

Vishay Intertechnology has introduced the first of its new Vishay Siliconix military-grade n-channel power MOSFETs: the JAN-qualified 60 V 2N6660JANTX/JANTXV and 90 V 2N6661JANTX/JANTXV. For military, space, and avionics applications, the devices combine low on-resistance and fast switching speeds in the sealed TO-205AD (TO-39) package.

PREMO presents its new PBP19 Series, a new inductors family designed for DC/DC converters and telecom power supplies up to 500W, where the height of the 19 RAC system may be 0.25 U or 0.5 U, increasing power density and reducing telecom power systems sizes. The PBP19 series with 7.4 mm height is offered in Tape&Reel for SMT technology and allows a maximum surface of 92% of total area in contact with the heat dissipating interface, either a co...

NEC Electronics Europe annonce l'extension de son portefeuille de produits de la série NP avec de nouveaux transistors MOS de puissance (PowerMOSFET) basse tension qui présentent une très faible résistance à l'état passant (RDS(on)) et une charge de grille (QG) réduite. Ces nouveaux composants basés sur la technologie SuperJunction1 de NEC Electronics affichent un excellent « facteur de mérite » (FOM), ce qui permet de réduire les per...

NEC Electronics introduces a new family of High Speed Optocouplers coming in a new white DIP package that provides enhanced isolation and shielding characteristics: 5000 Vrms isolation voltage; >0.4mm internal isolation distance; >8mm outer creepage distance; Minimum CMR of 15KV/µs.

International Rectifier vient de lancer une famille de MOSFET Planar qualifiés pour l’automobile, destinés à des applications variées au sein des véhicules équipés de moteur à combustion interne ou ICE (Internal Combustion Engine) et des véhicules hybrides et électriques.