Search results for "mosfet"

International Rectifier has introduced the company’s first family of radiation hardened (RAD-Hard) dual power MOSFETs in a compact hermetic LCC-6 surface mount package for low power lightweight space applications requiring a small footprint such as satellite payload power systems.

International Rectifier has launched two automotive DirectFET2 power MOSFETs optimized with low gate charge for switching applications including Switch Mode Power Supplies (SMPS), Class D Audio systems, High Intensity Discharge (HID) lighting, and other automotive power conversion applications.

International Rectifier has announced the expansion of its family of automotive DirectFET 2 power MOSFETs that deliver exceptional power density, dual-sided cooling and minimal parasitic inductance and resistance for heavy load applications, including Electric Power Steering (EPS), power supplies, battery switches on hybrid electric vehicles and Integrated Starter Alternators (ISA) on micro hybrid vehicles.

International Rectifier has announced the expansion of its SupIRBuck family of integrated point-of-load (POL) voltage regulators. The new devices, tailored for energy-efficient high performance server, storage, telecom and netcom applications offer even greater efficiency and functionality over previous generation devices for energy saving and easy on-board implementation.

International Rectifier today announced it will showcase the company’s industry-leading power management solutions at electronica 2010, Munich, November 9-12, 2010.

Vishay Intertechnology has announced the release of the industry's first 30-V monolithic power MOSFET and Schottky diode to be offered in a package with top and bottom heat dissipation paths for top performance in systems with forced air cooling. Offered in the PolarPAK package with double sided cooling, the new SkyFET SiE726DF device offers increased efficiency for high-current and high-frequency applications.

Vishay today introduced a new 20-V p-channel power MOSFET with the lowest on-resistance ever achieved for a p-channel device in the compact 2-mm by 2-mm footprint area of the thermally enhanced PowerPAK SC-70. The new SiA433EDJ is the newest product built on TrenchFET® Gen III p-channel technology, which uses self-aligning process techniques to pack one billion transistor cells into each square inch of silicon. This leading-edge technolog...

A power MOSFET with what is claimed to be the industry’s lowest on-resistance for a 60-V device in a package with double-sided cooling was released today by Vishay. The new SiE876DF, which comes in an SO-8 sized PolarPAK package, boasts maximum on-resistance of 6.1 milliohms at a 10-V gate drive, a 13 % improvement over the next best comparable device on the market.

Vishay Intertechnology, Inc. today released the industry's first 30-V p-channel power MOSFET in the SO-8 footprint area to boast maximum on-resistance down to 2.6 mΩ at a 10-V gate drive and 3.75 mΩ at 4.5 V. With these specifications, the new Vishay Siliconix Si7145DP, latest member of the TrenchFET Gen III p-channel family, achieves the lowest on-resistance ever for this voltage rating and footprint.

Vishay Intertechnology has announced an integrated DrMOS solution providing high-side and low-side n-channel MOSFETs plus a full-featured MOSFET driver IC, all in a single PowerPAK MLF6x6 package. Available in two versions tailored for 3.3-V or 5-V controllers respectively, the new SiC769 is fully compliant with the DrMOS specification for voltage regulators (VRs) in servers and desktop computers, graphics boards, workstations, game consoles, and...