Search results for "SiC"
ROHM’s new low-profile 12W metal plate shunt resistor
ROHM has developed a 12W-rated metal plate shunt resistor (PSR350). It is optimised for high-power applications in the automotive and industrial equipment markets. ROHM will also expand the PSR line-up to include a 0.2mΩ (PSR100) model along with a 15W type (PSR330).
onsemi and ZEEKR sign supply agreement for silicon carbide power devices
onsemi has announced a long-term supply agreement (LTSA) between the two companies.
Nexperia releases 650V silicon carbide diodes
Nexperia has introduced a 650V Silicon Carbide (SiC) Schottky diode designed for power applications which require ultra-high performance, low loss, and high efficiency.
Going Digital Awards in Infrastructure finalists announced
Bentley Systems, the infrastructure engineering software company, has announced the finalists of the 2023 Going Digital Awards in Infrastructure.
Navitas deal boosts Mouser’s power portfolio
Mouser Electronics has signed a global distribution agreement with Navitas Semiconductor, a pure-play, next-generation power semiconductor company.
Rutronik Racing powered by RECOM
RECOM has announced it is the number one power supply brand for Rutronik, an electronics distributor of high-scale and complex electronic components.
Top 5 power products in April
Electronic Specifier takes a look at the top 5 power products to have been released in April 2023.
ipTEST wins King's Award
ipTEST has been honoured with the King’s Award for Enterprise in recognition of advancing the test capabilities available for high-power SiC and GaN semiconductors.
Toshiba proves its power credentials at PCIM 2023
Toshiba is fully prepared for this year’s PCIM conference and exhibition, in Nuremberg 9th–11th May.
Tektronix to showcase solutions for testing power electronics at PCIM 2023
Tektronix announced that it will be showcasing a wide-range of test & measurement products and software solutions for power electronics, applicable from component design to system production, at PCIM 2023.