Search results for "transistor"
UCC5870-Q1 Automotive, 3.75kVrms 30A single-channel functional safety isolated gate driver for IGBT/SiC
The UCC5870-Q1 device is an isolated, highly configurable single-channel gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections, such as shunt-resistor–based overcurrent, NTC-based overtemperature, and DESAT detection, include selectable soft turn-off or two-level turn-off during these faults.
SFN's ‘Infrastructure Time Machine’ for chip designs
Search for the Next (SFN)has made available a family of four ITMs (Infrastructure Time Machines) – which can be considered process nodes – that enable chip designers to produce ICs in older 180nm and even one-micron geometry fabs with the equivalent performance of CMOS devices made in current state-of-the-art plants.
EAO introduces new series 57 multi-legend display
EAO introduces its new Series 57 pushbutton with multi-legend display that offers flexible and visible status displays.
GaN gains on silicon and keeps going
Gallium Nitride (GaN) has been nipping at silicon’s heels for dominance in IC design for 20 years. Its adoption is accelerating as prices fall and new uses for high power density chips are found. Caroline Hayes provides a status update.
Circuitry creates clean, cheap conversion
A power conversion technology, developed by UK based company, Pulsiv, eliminates inrush current completely. The use of an intelligent microcontroller with patented switching technology for AC/DC conversion delivers efficient power consumption that doesn’t cost the earth, says Caroline Hayes.
Imec simulation framework predicts thermal transport in RF devices for 5G and 6G
This week, at the 2022 International Electron Devices Meeting (IEEE IEDM 2022), imec, a global research and innovation hub in nanoelectronics and digital technologies, presents a Monte Carlo Boltzmann modelling framework that uses microscopic heat carrier distributions to predict 3D thermal transport in advanced RF devices intended for 5G and 6G wireless communication for the first time.
Innoscience launches 80mΩ RDS(on) 650V GaN HEMTs
Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost gallium-nitride-on-silicon (GaN-on-Si) power solutions, announced a new low RDS(on) 650V E-mode GaN HEMT device.
Fraunhofer IPMS presents 200 and 300mm technologies
The level of automation and efficiency in industry has increased significantly with Industry 4.0 and the Internet of Things. This requires more and more sensors, actuators, control devices and machine learning systems. The demand for compact, energy-efficient and advanced technologies as well as miniaturised components with innovative functions is increasing. However, the development of many of these technologies involves high costs and the use o...
Automotive devices from Toshiba
Extensive lineup of MOSFETs, optical isolation, transistors, and diodes, to cover various automotive applications in 12V to 48V battery systems. In addition, Toshiba offers automotive-grade motor control drivers.
NXP introduces high-performance S32K39 series MCUs
NXP Semiconductors announced a new S32K39 series of automotive microcontrollers (MCUs) optimised for electric vehicle (EV) control applications.