Search results for "igbt"
Reinforced isolation dual-channel gate driver with spacing option
The UCC2154x from Texas Instruments is an isolated dual channel gate driver family designed with up to 4-A/6-A peak source/sink current to drive power MOSFET, IGBT, and GaN transistors. UCC21540 in DWK package also offers 3.3mm minimum channel-to-channel spacing which facilitates higher bus voltage.
Opto-compatible single channel isolated gate driver for IGBTs
The UCC23513 from Texas Instruments is an opto-compatible, single-channel, isolated gate driver for IGBTs, MOSFETs and SiC MOSFETs, with 4.5A source and 5.3A sink peak output current and 5.7KVRMS reinforced isolation rating. The high supply voltage range of 33V allows the use of bipolar supplies to effectively drive IGBTs and SiC power FETs.
Transform your automotive thinking with Farnell and ON Semiconductor
For the modern designer, there’s no time to waste when it comes to delivering innovation in a variety of growth verticals quickly. However, it's also no small feat to launch new products when the fast-moving automotive, IoT and industrial markets are more competitive than ever.
Silicon carbide FET devices for global racing challenge
A Dutch solar car team from University of Twente and Saxion Hogeschool has selected silicon carbide (SiC) devices from UnitedSiC ahead of a major solar racing challenge in October. UnitedSiC provided product samples of their FAST Series of SiC FETs to Solar Team Twente, which they selected on the basis of superior performance.
Keeping trains moving; meeting new technology demands
A key element of the propulsion system for low speed urban transportation to high speed intercity trains is the traction converter that transforms the power from the power source, whether a catenary or diesel engine, to drive the electric motors. By Michel Ghilardi, LEM Research & Development Senior Engineer
Phase change materials: Innovations in thermal management
Thermal Interface Materials (TIMs) are used in electronics applications to improve the efficiency of heat transfer and reduce the operating temperature of a device. They work by improving the conduction of heat through to a heat sink, where the heat is radiated to the surrounding environment by means of convection. Demand for improved thermal management in electronic devices is ever-increasing, particularly in applications where both miniaturisat...
Utilising ANPC topology to boost system efficiency
Compared with traditional three-level neutral-point-clamped topologies, the advanced neutral-point-clamped (ANPC) inverter design supports an even loss distribution between semiconductor devices. Infineon Technologies utilises the ANPC topology for its hybrid SiC and IGBT power module EasyPACK 2B in the 1,200V family.
Build high energy density power supplies with integrated eGaN
High energy density switch-mode power supplies (SMPSs) can accelerate battery charging, reduce the size of solar micro-inverters, and meet the demand of server farm power requirements, all without generating excessive heat. However, engineers are now reaching the performance limits of the silicon MOSFETs and IGBTs that form the primary switching elements of conventional SMPSs. Instead, transistors constructed from enhancement-mode gallium nitride...
Single channel isolated gate driver with high-CMTI
The UCC21750 from Texas Instruments is a galvanic isolated single channel gate drivers designed for up to 1,700V SiC MOSFETs and IGBTs with advanced protection features, dynamic performance and robustness. UCC21750 has up to ±10-A peak source and sink current.
Family of photocouplers deliver low threshold input current
Renesas Electronics hasannounced three new 15Mbps photocouplers designed to withstand the harsh operating environments of industrial and factory automation equipment. The trend toward higher voltage, compact systems is driving stricter International safety standards and eco-friendly solutions that require smaller ICs with lower power consumption.