Search results for "igbt"
High-speed gate driver with five volt negative input voltage
The UCC27517A single-channel, high-speed, low-side gate driver device from Texas Instruments is capable of effectively driving MOSFET and IGBT power switches. Using a design that minimises shoot-through current, the UCC27517A is capable of sourcing and sinking high peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay typically 13ns.
Highly robust gate drivers ensure system safety
Power Integrations hasannounced the launch of its automotive-qualifiedSID1181KQSCALE-iDriver gate driver for 750V-rated IGBTs. The new part expands the company’s range of auto-qualified driver ICs, following the introduction of the 1,200V SID1182KQ driver IC.Compact, efficient and highly robust, the new driver IC uses Power Integrations’ high speed FluxLink communications technology to ensure system safety even during fault conditions...
Developing a GaN-based EV inverter design
Nexperia has announced a partnership with automotive engineering consulting company, Ricardo, to produce a technology demonstrator for an EV inverter using GaN-based technology. Gallium nitrade (GaN) is the preferred switch for these applications as GaN FETs lead to systems with greater efficiencies at lower costs with improved thermal performance and simpler switching topologies.
Duo partner to develop GaN based EV inverter design
Nexperia has announced a partnership with Ricardo to produce a technology demonstrator for an EV inverter based on Gallium Nitride (GaN) technology.
SiC FETs deliver increased efficiency for EV inverters
The UF3SC silicon carbide (SiC) FETs from UnitedSiC are now in stock at distributor Mouser Electronics.
Half-bridge SOI driver offers integrated bootstrap diodes
Infineon Technologies has broadened its EiceDRIVER portfolio with the 650V half-bridge gate drivers based on Infineon’s silicon on insulator (SOI) technology. The products provide leading negative transient voltage immunity, monolithic integration of a real bootstrap diode, and superior latch-up immunity for MOSFET and IGBT based inverter applications.
BLDC drivers target high-voltage applications
STMicroelectronics has introduced four new devices in the STSPIN32F0 motor-control system-in-package BLDC driver family, which simplify the design of mains-powered home appliances and industrial equipment including corded power tools, drives, pumps, fans, and compressors.
Lowest RDS(on) SiC FETs in DFN eight by eight format
UnitedSiC has introduced the UF3SC065030D8 and UF3SC065040D8; a low RDS(on) SiC FETs available in the popular low-profile DFN eight by eight surface-mount package. The 650V devices replace two standard silicon devices, enabling engineers to build switching circuits with greater efficiency and higher power density than is possible with a discrete design approach.
How to drive BLDC motors effectively with MOSFET tech
Our increased use of electric motors, especially in the automotive and industrial sectors, means that they are now a very large consumer of energy worldwide. BLDC (brushless FDC) motor technology is coming to the fore to improve reliability and efficiency, and MOSFET technology is providing an efficient drive solution. Mirko Vogelmann, Product Sales Manager Power Semiconductors, Rutronik explains.
EconoDUAL 3 with TRENCHSTOP IGBT7 for unmatched 900A power rating
Infineon Technologies AG introduced the new IGBT7 chip for its well-known Easy housing platform in March. Now it is taking the TRENCHSTOP IGBT7 to the arena of medium power: in the standard industry package EconoDUAL 3. In this chip technology, the 1200V module provides a leading nominal current of 900A enabling a 30% higher inverter output current for the same frame size compared with the former technology.