Search results for "transistor"

Magma Design Automation a provider of chip design software, today announced the final agenda for the MUSIC users conference in Silicon Valley on March 10 in San Jose. The program will feature parallel tracks of technical presentations and tutorials given by Magma users, design industry experts and Magma’s engineering research and development staff, and an exposition of Magma partners. Magma CEO Rajeev Madhavan will deliver a keynote address en...

RF Micro Devices, Inc announced that RFMD has qualified and production released the RF3934, a 140-watt highly-efficient gallium nitride (GaN) RF unmatched power transistor (UPT) with superior performance versus competing GaAs and silicon power technologies.

Nujira and RF Micro Devices announced that they will be demonstrating an efficient broadband power amplifier (PA) design for 4G base stations at Mobile World Congress, Barcelona, February 2010. The design integrates the new RFMD RFG1M family of high performance gallium nitride (GaN) amplifiers with Nujira's Coolteq.h envelope tracking power modulators.

RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced that RFMD® has production released the RF3932, a 75-watt, highly efficient gallium nitride (GaN) RF unmatched power transistor (UPT) that delivers superior performance versus competing GaAs and silicon power technologies.

In the effort to enhance the advanced metal-high-k gate stack for next-generation logic devices, imec successfully demonstrated higher-k dielectric with Replacement Metal Gate (Metal-Gate-Last) transistors that achieved 200x-1000x reduction in gate leakage relative to leading-edge logic devices in the industry with HfO2 high-k gate dielectric.

At the International Electron Devices Meeting in San Francisco imec’s advanced CMOS research program reports promising advances in scaling logic, DRAM and non-volatile memory. A new device based on non-silicon channels was realized to scale high-performance logic towards the sub-20nm node. Moreover, imec developed low-leakage capacitors allowing DRAM to be pushed to the 2x nm node. And the switching mechanism of resistive RAM for next-generatio...

REALITY, a European funded initiative on Design for Variability, has just finished its project mission. In about its 2.5 years lifespan REALITY has focused on developing industrially relevant innovative design techniques, methods, and flows for the design and analysis of energy-efficient self-adaptive System-on-Chips (SoCs). The tackled challenges include benchmarking the impact of the latest 32nm CMOS process manufacturing variability at all abs...

At this weeks International Electron Devices Conference, the nanoelectronics research center imec presents an innovative, simple and robust GaN-on-Si double heterostructure FET (field effect transistor) architecture for GaN-on-Si power switching devices. The architecture meets the normally-off requirements of power switching circuits and is characterized by low leakage and high breakdown voltage, both essential parameters to reduce the power los...

Despite the severe economical downturn, 2009 was a satisfying year for imec. Imec’s total revenue amounted to 275 million euro, including 222 million euro coming from collaboration with the global industry. 44.7 million euro was granted to imec Belgium by the Flemish government, to guarantee imec’s long term research and investment in new research initiatives, and imec the Netherlands at Holst Centre received 8 million euro from the Dutch gov...

30V and 50V LDMOS power transistors deliver higher gain, greater efficiency and enhanced ruggedness in mismatched applications