Search results for "transistor"

Linear Technology Corporation announces a new high reliability, military plastic MP-grade version of the LT1175, a 500mA negative micropower low dropout regulator. The MP-grade LT1175 is offered in SOIC-8 and DD-Pak packages with a -55°C to +125°C operating junction temperature range. With a wide input voltage range of -4.3V to -20V, the LT1175 features micropower operating currents of 45uA quiescent and 10uA in shutdown, preventing output volt...

Mouser Electronics, Inc. has announced it will distribute an extensive selection of semiconductors from Infineon Technologies, a leading supplier of semiconductor and system solutions. Infineon Technologies’ products address central challenges to modern society including energy efficiency, communications, and security.

Vishay today introduced a new 20-V p-channel power MOSFET with the lowest on-resistance ever achieved for a p-channel device in the compact 2-mm by 2-mm footprint area of the thermally enhanced PowerPAK SC-70. The new SiA433EDJ is the newest product built on TrenchFET® Gen III p-channel technology, which uses self-aligning process techniques to pack one billion transistor cells into each square inch of silicon. This leading-edge technolog...

Vishay Intertechnology has introduced the first of its new Vishay Siliconix military-grade n-channel power MOSFETs: the JAN-qualified 60 V 2N6660JANTX/JANTXV and 90 V 2N6661JANTX/JANTXV. For military, space, and avionics applications, the devices combine low on-resistance and fast switching speeds in the sealed TO-205AD (TO-39) package.

NEC Electronics Europe annonce l'extension de son portefeuille de produits de la série NP avec de nouveaux transistors MOS de puissance (PowerMOSFET) basse tension qui présentent une très faible résistance à l'état passant (RDS(on)) et une charge de grille (QG) réduite. Ces nouveaux composants basés sur la technologie SuperJunction1 de NEC Electronics affichent un excellent « facteur de mérite » (FOM), ce qui permet de réduire les per...

NEC Electronics Europe has introduced new transistor output optocouplers with guaranteed operation up to 110degC ambient temperature. The extended temperature range make them ideal for applications such as switched mode power supplies and factory equipment, and all applications where components are packed densely.

International Rectifier lance un nouvel outil Internet de sélection de transistors IGBT permettant d’optimiser la conception d’un large panel d’applications telles que la commande moteur, les alimentations de puissance sans interruption (UPS), les inverseurs pour panneaux solaires et la soudure.

International Rectifier has expanded its portfolio of RAD-Hard Logic Level gate drive MOSFETs with the introduction of 60 V, 100 V and 250 V MOSFETs for switch mode power supplies (SMPS), satellite power distribution systems and resonant power converters in high-reliability applications.

Electronic component distributor Digi-Key Corporation and Cree, Inc., a leader in wide bandgap transistors and radio frequency integrated circuits (RFICs), announced today that Cree’s silicon carbide (SiC) Metal-Semiconductor Field-Effect Transistors (MESFETs) are now in stock and ready for shipment.

Mitsubishi Electric is introducing three models of gallium nitride (GaN) high electron mobility transistors (HEMTs) with 10W, 20W and 40W output powers, for L to C band (0.5~ 6.0 GHz) amplifiers. The three devices are designed for use in base stations for mobile phones, very small aperture terminals and other transmission equipment.