Search results for "transistor"

Oxford Instruments Plasma Technology, leader in etch, deposition and growth systems, has recently received an order for three plasma etch and deposition tools from the Centre of Excellence in Nanoelectronics (CEN) at the Indian Institute of Science (IISc) in Bangalore, India. The three System100 tools will be situated in the CEN’s state-of-the art nanofabrication facility’s new clean room and consist of two PlasmaPro™ System100 ICP Cobra et...

Cambridge’s Anglia Ruskin University (www.anglia.ac.uk) has purchased a Prism Sound dScope Series III digital and analogue audio analyser to further the studies of students in its Computing and Technology department.

Magma Design Automation today launched Quartz iPOP, the “improved Productivity, Operability and Performance” initiative to facilitate designers’ adoption of the Quartz™ DRC and Quartz LVS software for designs targeted at 65 nanometers (nm) and below. Magma’s Quartz products, the first truly scalable physical verification solutions, handle larger designs and provide turnaround time up to an order of magnitude faster than traditional sol...

Magma Design Automation Inc. announced today that SuVolta, Inc. has expanded its business relationship with Magma by entering into a licensing agreement to use the FineSim SPICE multi-CPU circuit simulator.

RF Micro Devices has announced that it has qualified and released the RF3931, a 48-volt, 30-watt gallium nitride (GaN) unmatched transistor optimized for high power commercial and defense applications. The RF3931 is RFMD's first GaN product to achieve full product qualification, a process through which RF products are released by RFMD for mass production. Shipments of the RF3931 have commenced to multiple high power amplifier (HPA) manufacturers,...

RF Micro Devices, a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced the Company has added its world-class Gallium Arsenide (GaAs) technology to RFMD’s foundry services portfolio and will begin providing a full suite of GaAs Pseudomorphic High Electron Mobility Transistor (pHEMT) technologies to customers of its Foundry Services business unit.

RF Micro Devices today announced that RFMD has production released the RF3932, a 75-watt, highly efficient gallium nitride (GaN) RF unmatched power transistor (UPT) that delivers superior performance versus competing GaAs and silicon power technologies.

RF Micro Devices, Inc. today announced it has received its first purchase order from a tier-one wireless base station original equipment manufacturer (OEM) for a product featuring RFMD's state-of-the-art gallium nitride (GaN) process technology. The purchase order is for RFMD's RFG1M09180 180-watt GaN broadband power transistor (BPT) and is in support of the global expansion of 4G wireless networks.

Imec is successfully testing and evaluating various options for further transistor scaling using high-k dielectrics and metal gates in a replacement metal gate integration schema. Although RMG technology is inherently more complex than gate-first integration, it has a number of advantages that allow increasing the device performance and that widen the choices in terms of high-k and metal gate materials.

Imec realized a fT/fMAX 245GHz/450GHz SiGe:C heterojunction bipolar transistor (HBT) device, a key enabler for future high-volume millimeter-wave low-power circuits to be used in automotive radar applications. These HBT devices also pave the way to silicon-based millimeter wave circuits penetrating the so-called THz gap, enabling enhanced imaging systems for security, medical and scientific applications