Search results for "transistor"

CISSOID, the leader in high-temperature and high reliability semiconductor solutions, unveils THEMIS and ATLAS, their power transistor driver chipset meant for high efficiency motor drives and power converters. THEMIS and ATLAS are especially designed to drive seamlessly the most advanced power switches, including Silicon Carbide (SiC) MOSFETs and JFETs as well as Silicon IGBTs and MOSFETs. The chipset is the cornerstone of energy-saving, reliabl...

CISSOID, the leader in high temperature semiconductor solutions, released their new EREBUS technology, which implements Buck (Step-Down) DC-DC Converters operating reliably and with high efficiency from -55°C to +225°C.

Semtech Corp has announced the SC804, a linear, single-cell Lithium-Ion battery charger with battery pack and adapter flexibility features to support lower design costs for portable devices.

Cree announced today that it has achieved a major breakthrough in the development and wide scale commercialization of silicon carbide (SiC) technology with the demonstration of high quality, 150-mm SiC substrates with micropipe densities of less than 10/cm2. The current Cree standard for SiC substrates is 100-mm diameter material.

Atmel has announced a new custom architecture for 90nm SiliconCity ASIC development, providing up to 350K gates/mm2, offering customers gate densities in the range of a standard cell ASIC. SiliconCity Flexible Architecture allows designers to create their own unique base wafer architecture for multiple product variations while generously reducing customer design time, lowering the NRE and reducing risk through design reuse.

NXP Semiconductors has launched what it says is the world’s first fully integrated Doherty amplifiers for TD-SCDMA and WCDMA base stations, expanding its extensive portfolio of industry-leading RF power transistors. Maintaining NXP’s RF technology innovation, the advanced BLD6G21-50 and BLD6G22-50 fully integrated amplifiers offer ease-of-design while delivering unsurpassed efficiency of > 40% at an average power of 10W. This enables 35% low...

At CCBN2011 today, NXP Semiconductors N.V. (NASDAQ: NXPI) announced new additions to its Ultra High Frequency (UHF) and FM broadcast product portfolio, including the BLF888B transistor. Configured as a Doherty power amplifier, the BLF888B achieves breakthrough 50 percent DVB-T efficiency, offering significant reductions in the power consumption of UHF broadcast systems.

NXP have revealed the expansion of its transistor portfolio in the ultra-small discrete flat no-leads package DFN1006B-3 (SOT883B). NXP now offers 60 bipolar transistors and 12 small-signal single N- and P-channel Trench MOSFETs in the 1-mm x 0.6-mm x 0.37-mm DFN plastic SMD package - the industry’s largest portfolio in the smallest transistor package (DFN1006) available today. The expanded portfolio includes a wide range of general purpose ...

ZMD AG announced availability of the ZLED7320, a new member of its high current ZLED7x20 family of 40V LED-Driver-ICs. The ZLED7320, which operates at up to 98% efficiency and is available in a small-footprint DFN-5 package, is designed to help manufacturer’s cost-effectively address the growing high-brightness (HB) LED lighting market.

Maxim has introduced the MAX5661 16-bit, industrial digital-to-analog converter (DAC) with two precision, high-voltage output circuits. This DAC features unprecedented integration by incorporating a voltage-output amplifier, current-output amplifier, and pass transistors on the same silicon.