Search results for "transistor"

NEC Electronics has introduced two new technologies for the manufacture of 40-nanometer (nm) system-on-chip (SoC) devices with embedded dynamic random access memory (eDRAM). The UX8GD eDRAM technology boasts clock speeds up to 800 megahertz and low operating power, making it optimal for use in consumer electronics products such as digital video cameras and game consoles. The UX8LD eDRAM technology features low leakage-current levels that reduce ...

International Rectifier has launched a family of 600V insulated gate bipolar transistors (IGBTs) that reduces power dissipation by up to 30 percent in uninterruptible power supply (UPS) and solar inverter applications up to 3 kW. The new application-specific devices use IR’s latest-generation field stop trench technology to reduce conduction and switching losses, and are optimized for switching at 20 kHz with low short circuit requirements, ena...

Vishay today introduced a new 12-V p-channel TrenchFET Gen III power MOSFET with the industry’s lowest on-resistance for a p-channel device in the thermally enhanced PowerPAK® SC-75, which features a 1.6-mm by 1.6-mm footprint area.

The preferred topology for switched power supplies over 500W is Full Bridge. The large offer of efficient low RDSon Mosfet transistors made designers chose this topology as it is more efficient and reliability as the support lower DS Voltage when open. This technology allows a smaller transformer as it works in 4 quadrants then optimizing the magnetic circuit.

Mitsubishi Electric will start shipments of its GaAs low-noise HEMT (High Electron Mobility Transistor) MGF4921AM by the end of January 2009. The new GaAs HEMT is highly-suitable for low-noise amplifiers in satellite digital radio reception systems as well as for C band DBS (direct broadcast satellite) receivers.

Mitsubishi Electric Corporation has introduced a high power amplifier with InGaP HBTs (Heterojunction Bipolar Transistors) which is tailored specifically for WiMAX terminal applications. The new device dubbed MGFS39E2527 provides up do 30dBm of output power in the frequency range from 2.5 to 2.7GHz.

Fujitsu Semiconductor Limited and SuVolta Inc. announced that they have successfully demonstrated ultra-low-voltage operation of SRAM (static random access memory) blocks down to 0.425V by integrating SuVolta's PowerShrink low-power CMOS platform into Fujitsu Semiconductor's low-power process technology. By reducing power consumption, these technologies will make possible the ultimate in ecological products in the near future. Technology details ...

A new version of Yokogawa’s curve-tracer software for semiconductor testing has been introduced for the company’s GS610 source measure unit. Designed to carry out voltage/current analysis on two-lead or three-lead components including discrete semiconductors, integrated circuits and optoelectronic components, the new PC-based software works in conjunction with the USB-connected GS610 to enable source and sink operations at up to 100 V at 0.5 ...

Linear Technology Corporation annonce le LT3512, un régulateur à récupération d'énergie, monolithique, isolé et de forte tension, qui simplifie grandement la conception d’un convertisseur DC/DC isolé. Il ne nécessite pas de photocoupleur ni d’un troisième enroulement, ni d’un transformateur d’isolement dans la boucle de régulation, puisque la tension de sortie est détectée directement sur l’enroulement primaire du transform...

Linear Technology présente le LTC3617, un régulateur à découpage, abaisseur, synchrone, monolithique, de haut rendement, apte à générer une tension de terminaison de bus pour les applications à mémoires DDR/DDR2/DDR3 et aux futurs standards, qui requièrent un courant sortant et un courant entrant. Un diviseur résistif interne fixe la tension d’alimentation de terminaison DDR à VTT et les tensions de référence VTTR égales à la mo...