Search results for "transistor"
IPC RELEASES NEW REVISION OF SURFACE MOUNT DESIGN AND LAND PATTERN STANDARD
IPC — Association Connecting Electronics Industries has released the B revision of IPC-7351, Generic Requirements for Surface Mount Design and Land Pattern Standard. The leading industry standard for surface mount land pattern design and layout, IPC-7351B provides designers and printed board fabricators with updated guidance on requirements of land pattern geometries used for the surface attachment of electronic components, as well as surface m...
Deeter Electronics “Sender” Extends Industrial Wireless Sensor System to incorporate Industry Standard Inputs
The Deeter Group announced the introduction of its Wireless Sender which increases the possible applications of the recently launched Deeter Wireless Sensor System for industrial measurement and control.
Sentec breezes into turbine design - Unique control system for wind turbines developed
Sentec, the smart metering technology specialist and product development company, has collaborated with another Cambridge business, Wind Technologies Ltd, to create a bespoke control system for wind turbines. The first test site is now in-situ in the city.
SemiSouth Announces 2nd Major Capacity Expansion within 18 months
SemiSouth Laboratories, Inc today announced a second major capacity expansion within 18 months. The expansion will help drive the continued growth of SemiSouth’s SiC fabrication facility and better serve customers who are rapidly adopting the company’s diode and industry-leading power transistor products. The adoption of SemiSouth’s SiC technology enables ultra-efficient power conversion for solar and wind inverters, hybrid/electric vehicl...
NXP Announces LDMOS UHF Transistor With DVB-T Output Power of 120W
NXP Semiconductors N.V. today announced the availability of an Ultra High Frequency (UHF) RF power transistor; the BLF888A, a 600W LDMOS device for broadcast transmitters and industrial applications. The BLF888A is the most powerful LDMOS broadcast transistor in the market to date. For a DVB-T signal over the full UHF band from 470 to 860MHz, the transistor can deliver 120W average power with efficiencies greater than 31 percent. Featuring excell...
Avago Announces CDMA Cell-Band and PCS Front End Modules for Mobile Handsets
Avago Technologies has announced two new front end modules that incorporate a power amplifier, duplexer, band-pass filter and coupler to improve efficiency and extend talk time in mobile handsets. Avago’s AFEM-775x series includes Avago’s CoolPAM and Film Bulk Acoustic Resonator technologies to improve performance in CDMA cell band and dual-band handsets, wireless PDAs and wireless data cards.
M/A-COM Technology Solutions Extends Leadership in High Power Semiconductors With New Portfolio of GaN Products
M/A-COM Technology Solutions Inc. has extended its leadership position in high power semiconductors with the introduction of a new family of Gallium Nitride (GaN) RF Power transistors.
NXP Announces Availability of LPC1788 with LCD Graphics Controller
NXP Semiconductors N.V. has announced availability of its LPC1788 microcontroller – the industry’s first ARM® Cortex™-M3-based MCU to be shipping in volume with an integrated LCD controller. With up to 96 KB of on-chip SRAM and a 32-bit external memory interface, the LPC178x series allows customers to easily and cost-effectively add high-quality graphics to their applications. With support for a wide range of graphics display panels, the L...
Samsung invests €50m to bring specialist gases to new TFT-LCD fab
Linde LienHwa today announced a significant long-term deal with Samsung Electronics to supply gases for its latest 8.5 generation TFT-LCD manufacturing plant in Suzhou Industrial Park (SIP), China. Industrial gases are essential to the production of transistors that control the pixels in LCD screens.
Opto Diode’s New, Medium Emission Angle, High-Power IR LEDs
Opto Diode introduces the third in a series of infrared (IR) LEDs, the OD-850L. Domestically manufactured using highly reliable, liquid-phase epitaxially-grown gallium aluminum arsenide (GaAlAs), the new high optical output IR emitters feature a medium emission angle for optimum coverage with excellent power density. Similar to the recently introduced OD850W (wide angle emission) and the OD-850N (narrow angle emission) IR LEDs from Opto Diode, th...