Search results for "transistor"
ON Semiconductor introduces high performance Field Stop IGBTs for high efficiency power conversion
ON Semiconductor today introduced a new series of Field Stop Insulated Gate Bipolar Transistors (IGBTs) targeted at industrial motor control and consumer products. The NGTB15N120, NGTB20N120 and NGTB25N120 enable high performance power conversion solutions for a wide range of demanding applications, including induction cook tops, rice cookers and other small kitchen appliances.
Low-profile open-frame DC-DC converters from Murata Power Solutions deliver 25W from one square inch of board area
Murata Power Solutions has introduced the UEI25-120-D48 series of 25W output, 2:1 input range, 12V output, high efficiency, isolated DC-DC converters. Featuring 25W output in one square inch of board area, the UEI25-120-D48 series offers efficient regulated DC power for PCB mounting. The low-profile 24.38 x 27.94 x 8.13mm (0.96 x 1.1 x 0.32) converters accept a 2:1 input voltage range of 36 to 75VDC, ideal for telecom equipment. The series also f...
Murata Power Solutions extends its range of 25W low-profile open-frame DC-DC converters
Murata Power Solutions announced today additions to its UEI25 series of 25W output, 2:1 input range, high efficiency, isolated DC-DC converters. Featuring 25W output in one square inch of board area, the new devices add +3.3VDC and +5VDC output models to the series. A +12VDC model was launched in 2010. All converters can now be specified in either surface mount or through-hole packages.
Freescale introduces industry-first 50 V RF LDMOS power transistor for high-mismatch applications
Freescale Semiconductor today introduced an RF LDMOS power transistor designed for operation from 1.8 to 600 MHz and optimized for use under the potentially-destructive impedance mismatch conditions encountered in applications such as CO2 lasers, plasma generators, and magnetic resonance imaging (MRI) scanners. The new MRFE6VP6300H FET is the world’s first 50 V LDMOS transistor to deliver full-rated output power of 300 W CW into a load with a V...
Diodes introduit des composants miniatures en boîtier SOT963 pour les équipements électroniques ultra portables
Diodes Incorporated a introduit des transistors bipolaires transistor, des MOSFET et des dispositifs TVS conditionnés dans des boîtiers ultra miniatures SOT963, avec des performances identiques ou supérieures à des composants dans des boîtiers plus grands.
Une commande en courant constant de Diodes Incorporated fournit un contrôle polyvalent d'applications à LED
Le circuit de commande de LED AL8400 de Diodes Incorporated est conçu pour fournir une large gamme de courants finement régulés pour LED haute luminosité, via un transistor externe. Ce contrôleur convient à un grand éventail d'applications de chaînes de LED dans les systèmes d'illumination, de panneaux indicateurs ou de signalisation numérique. Directement alimenté par une tension située entre 2,2 V et 18 V, il pilote des transistors ...
LED lighting drivers from Diodes Incorporated simplify low power single cell applications
The ZXLD381 and ZXLD383 LED drivers from Diodes Incorporated have been designed to provide the simplest possible solution for driving low power high brightness LEDs from a single solar or rechargeable battery cell. PFM DC-DC converters with an on-board low saturation voltage switching transistor, the devices only need an inductor for high efficiency LED illumination.
CISSOID introduces Mercury, a High Temperature 80V Small-Signal Transistor
CISSOID, a leader in high temperature semiconductor solutions, introduces a new product in their Planet family of high temperature transistors and switches. Mercury is a High Temperature 80V Small-Signal N-channel MOSFET Transistor with guaranteed operating temperature range from -55°C to +225°C. With its extreme temperature robustness, its input capacitance of only 32pF and its gate leakage limited to 5.6µA at 225°C, this 80V transistor is i...
CISSOID - RHEA, a High Temperature Dual-Channel, 2Mbit/s Isolated Data Transceiver
CISSOID, the leader in high-temperature semiconductor solutions unveils RHEA, a high temperature data transmission solution with galvanic isolation of 2.5kV and operating reliably from -55°C to +225°C. The CHT-RHEA is a single chip dual channel, full duplex transceiver (2 transmit and 2 receive channels). The magnetic isolation on each channel is ensured by an external tiny pulse transformer, of which the core diameter does not exceed 6mm (0.24...
CISSOID Releases HADES, a High Temperature and High Reliability Isolated Gate Driver for High Density Power Converters
CISSOID launched HADES, the first isolated gate driver solution designed to drive high temperature power transistors, specifically (but not exclusively) Silicon carbide (SiC) and Gallium nitride (GaN) fast-switching devices. With HADES, system engineers can develop power converters that are 5 times smaller and lighter than before, with better efficiency. They will also get power converters able to operate in high temperature ambiance if required....