Search results for "gan"

National Semiconductor has introduced the industry’s first 100V half-bridge gate driver optimized for use with enhancement-mode Gallium-Nitride (GaN) power field-effect transistors (FETs) in high-voltage power converters. National’s new LM5113 is a highly-integrated, high-side and low-side GaN FET driver that reduces component count by 75 percent and shrinks printed circuit board (PCB) area by up to 85 percent compared to discrete driver de...

Plextek, the Cambridge-based electronics and communications design consultancy today announced that it is cooperating with TriQuint Semiconductor, a leading RF products manufacturer and foundry services provider, on a co-marketing agreement. The agreement adds Plextek to TriQuint’s third party RF design resources website which refers TriQuint’s foundry services customers to proven, specialist RF design services. These customers can no...

Six partners from the semiconductor and solar industries are joining forces in the NEULAND project funded by the Federal Ministry of Education and Research (BMBF) to explore new avenues for the efficient use of electricity from renewable sources. NEULAND stands for innovative power devices with high energy efficiency and cost effectiveness based on wide bandgap compound semiconductors. The project aims to reduce the losses in feeding electricit...

Cypress Semiconductor Corp a présenté aujourd'hui un nouveau contrôleur TrueTouch Gen4 destiné au marché en forte croissance des tablettes et des livres électroniques. Le nouveau circuit CY8CTMA1036 possède 65 E/S de détection, lui permettant d'afficher une performance sans faille pour des écrans jusqu'à 12 pouces. Tout comme les circuits Gen4 pour plus petits écrans il offre la meilleure performance de l'industrie dans toutes les catÃ...

Oxford Instruments Plasma Technology is delighted to announce a multiple system order from a major Taiwan-based LED epiwafer and chip maker, for use in the production of High Brightness LEDs (HBLEDs).

Technologies and Devices International, Inc. (TDI), part of the Oxford Instruments Group, and Ostendo Technologies are pleased to announce the availability of Semi-Polar (11-22) GaN layer on sapphire substrate wafers using Ostendo’s proprietary design and TDI’s proprietary Hydride Vapour Phase Epitaxy (HVPE) technology.

JTAG Technologies, a leading provider of IEEE Std. 1149.1 solutions for testing and programming high-density PCBs, has announced a further extension to its line of high-performance boundary-scan IEEE Std. 1149.1 controllers. Known as the DataBlaster JT 37x7/PCIe, the new unit offers support for the popular PCI-express slot format found extensively in today’s PCs. The PCIe bus is a high-speed serial replacement of the older parallel PCI bus.

RF Micro Devices, Inc announced that RFMD has qualified and production released the RF3934, a 140-watt highly-efficient gallium nitride (GaN) RF unmatched power transistor (UPT) with superior performance versus competing GaAs and silicon power technologies.

Nujira and RF Micro Devices announced that they will be demonstrating an efficient broadband power amplifier (PA) design for 4G base stations at Mobile World Congress, Barcelona, February 2010. The design integrates the new RFMD RFG1M family of high performance gallium nitride (GaN) amplifiers with Nujira's Coolteq.h envelope tracking power modulators.

RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced that RFMD® has production released the RF3932, a 75-watt, highly efficient gallium nitride (GaN) RF unmatched power transistor (UPT) that delivers superior performance versus competing GaAs and silicon power technologies.