Search results for "transistor"

QPT Limited recently announced that it has created the drive, control, and sense technologies to maximise GaN transistor performance and overcome design challenges in the 100 kHz to 20 MHz frequency range for high-power and high-voltage applications that use hard switching.

Richardson RFPD is offering availability and full design support capabilities for a new reference design from NXP Semiconductors.

Rutronik is adding PANJIT's new 30V and 40V LV automotive MOSFETs to its portfolio.

In the realm of heat transfer, thermal energy is conveyed by quantum particles known as phonons. However, at the nanoscale relevant to today's advanced semiconductors, phonons aren't sufficient for effective heat removal. Therefore, Purdue University researchers are exploring a novel approach by employing hybrid quasiparticles called ‘polaritons’ to enhance this process.

Taiwanese manufacturer Bruckewell is now also offering various GaN solutions for digital power supplies with QR (quasi resonant) and LLC topologies.

STMicroelectronics' first galvanically isolated gate driver for gallium-nitride (GaN) transistors, the STGAP2GS, trims dimensions and bill-of-materials costs in applications that demand superior wide-bandgap efficiency with robust safety and electrical protection.

From the 9th to the 13th of December 2023, the 69th Annual IEEE International Electron Devices Meeting (IEDM) will convene at The Hilton San Francisco Union Square, offering a unique platform for professionals in semiconductor and electronic device technology.

Nexperia has launched its entry to the insulated gate bipolar transistor (IGBT) market with a range of 600V devices, starting with the 30A NGW30T60M3DF.

STMicroelectronics has announced the addition of MasterGaN1L and MasterGaN4L to its product line, representing the latest in its integrated gallium-nitride (GaN) bridge devices. These devices mark a significant leap in simplifying power-supply design, utilising wide-bandgap technology to meet contemporary ecodesign standards.

The significance of transistors capable of altering their properties cannot be understated in the advancement of future semiconductors.