Search results for "Ampleon"
915MHz RF LDMOS module speeds time to market
A complete 600-Watt RF Power LDMOS module for industrial, scientific and medical applications operating in the 915MHz ISM frequency band has been introduced by Ampleon.
LDMOS RF power transistors reach 80% efficiency
Two additions have strengthened Ampleon’s 9th generation line-up of high-performance 50V Si LDMOS high-efficiency RF power transistors.
Online symposium addresses design challenges
Mouser Electronics, TTI, and the TTI Family of Companies — Connected Development, RFMW, and Symmetry Electronics — are collaborating to present the Reality.2020 online technology symposium, June 10-11.
500W LDMOS transistor saves space, cuts costs
The BLP05H9S500P LDMOS-based power amplifier transistor from Ampleon is designed for use in industrial heating, defrosting, plasma lighting and medical applications. Operating at a frequency range of between 423 to 443MHz, the device can deliver up to 500W output power in pulsed or continuous wave modes and enables so far untapped drain efficiency levels of typically 75%.
Partnership ensures continued Ampleon supply
Ampleon and Rochester Electronics have joined forces to extend the supply of Ampleon’s VDMOS portfolio of high-performance RF transistors to customers worldwide. This strategic partnership will allow continued product availability to their valued customers.
12V LDMOS transistors boast excellent linearity
Ampleon has bolstered its land mobile radio portfolio with a line of 12V laterally diffused metal oxide semiconductor (LDMOS) transistors. This new 12V LDMOS platform is based upon the proven 9th generation of Ampleon’s LDMOS technology and will target commercial, public safety and defence mobile radio applications.
EuMW 2019: LDMoS and GaN solutions promenade in Paris
During European Microwave Week 2019 in Paris, Ampleon will participate in the exhibition, present several technical papers and sponsor the European Microwave Student Design Competition Thrust 2 “Wideband Power Amplifier Biasing Network Design” element.
RF power technology innovations at IMS 2019
At the IEEE International Microwave Symposium (IMS) held in Boston, Massachusetts, USA, Ampleon announced it will participate in order to introduce its wide variety of new LDMOS and GaN solutions targeting telecom, aerospace and defence, NCC, ISM, cooking and defrosting applications.
Rugged RF power LDMOS transistor for ISM applications
The first of a family of RF power devices based upon its Advanced Rugged Technology (ART) derivative of the proven 9th generation high voltage LDMOS process technology, has been released by Ampleon. The process has been developed to enable the implementation of extremely rugged transistors with operating voltages of up to 65V.
Efficient power transistor enables compact amplifier designs
A high-efficiency 750W RF power transistor has been announced by Ampleon, with the BLF0910H9LS750P, which has a high efficiency of 72.5% at 915MHz and a rugged design. The device operates at frequencies from 902MHz to 928MHz making it suitable for use in industrial, scientific, and medical systems, as well as for professional cooking applications.