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Aledia today announced that solid-state lighting (SSL) industry veteran Dr. Bernhard Stapp has joined its board of directors.

International Rectifier have today announced that it has qualified and shipped products built on its revolutionary Gallium Nitride-based power device technology platform for a home theatre system manufactured by a leading consumer electronics company. The pioneering GaN-based power device technology platform is the result of ten years of research and development by IR based on the company's proprietary GaN-on-silicon epitaxial technology.

LAST POWER, the European Union-sponsored program aimed at developing a cost-effective and reliable technology for power electronics, today announced its three-year program achievements that place Europe at the forefront of research and the commercialization of energy-efficient devices for industrial and automotive applications, consumer electronics, renewable-energy conversion systems, and telecommunications.

Plessey today announced that samples of its Gallium Nitride (GaN) on silicon LED products (p/n PLW111010) are today available. These entry level products are the first LEDs manufactured on 6-inch GaN on silicon substrates to be commercially available anywhere in the world. Plessey is using its proprietary large diameter GaN on silicon process technology to manufacture the LEDs on its 6-inch MAGICTM (Manufactured on GaN I/C) line at its Plymouth, ...

Transphorm announce the Total GaN family of Gallium Nitride on silicon transistors and diodes, establishing the world’s first JEDEC-qualified 600 V GaN device platform. This marks a significant milestone in the broad adoption of GaN-based power electronics in power supplies and adapters, PV inverters for solar panels, motor drives, as well as power conversion for electric vehicles.

Economical production of wind turbine rotor blades, aircraft structurals, automotive models and patterns, boat structures, and large moulds and tools are some of the applications for which the new Zimmermann FZ33 5-axis machining centre is ideal. Components made from wood, expanded polystyrene, plastic, composites and light metals through to cast iron, tool steel, titanium and exotic alloys can be accommodated within a working volume from 3 to 40...

Two years ago, Yole Développement said “The SiC industry is not a niche market anymore.” With its SiC technology & market analysis update arriving in May 2013, the French technology consulting company will confirm this statement by announcing that the SiC Devices market will surpass US$600M by 2020. “We expect a SiC market with 30% CAGR between 2015 – 2020,” said Dr. Philippe Roussel, Business Unit Manager, Power Electronics & Compound...

IR engineering and sales staff will demonstrate IR’s latest energy-saving and high power density enabling technologies and products at the IR booth, Hall 9, Stand 413. The IR booth will feature the company’s latest power management solutions including a demonstration of its COOLiR technology for automotive, µIPM integrated modules and Gen8 IGBTs for motor control applications, and IR’s GaN-based power device platform, GaNpowIR.

API Technologies has expanded their Power Amplifier line of products to include the latest in GaN technology driven designs. This expanded line is specially intended for use in electronic warfare, RCIED countermeasures, and national security jammer applications where the use of rugged and highly reliable power amplifier designs is mission critical.

Arkansas Power Electronics International and GaN Systems announce the test results for a gallium nitride power switch based DC-DC boost converter. The converter demonstrated at APEI exploited the ultra-high switching capability of GaN Systems’ high power switch to achieve a 1 MHz switching capability. In addition, the boost converter was able to demonstrate over 98.5% efficiency at 5 kW output power. Testing demonstrated turn-on and turn-off tr...