Search results for "gan"

GaN Systems has today announced that a team of its experts on gallium nitride technologies will present a major conference paper at the 224th ECS Electrochemical Energy Summit (San Francisco, California October 27 – November 1). Authored by Tom MacElwee, John Roberts, Hughes Lafontaine, I. Scott, Greg Klowak, and Lyubov Yushyna, the “Characterisations and performance of D-Mode GaN HEMT transistor used in a cascode configuration”...

Yole Développement announces its new market & technology patent investigation, LED Phosphors and Down-Converters. Hundreds of companies are involved in LED phosphor IP. Most of the major LED players are present in the list of the top patent assignees. But independent phosphor manufacturers are also emerging as major forces in the IP landscape… LED phosphor IP is shaping the industry.

On September 3, 2013, in the patent infringement lawsuits in Germany at the Düsseldorf District Court which Nichia Corporation filed against Everlight Electronics Co., Ltd and Everlight Electronics Europe GmbH (“Everlight”, docket number 4a O 56/12), as well as their German distributors Future Electronics Deutschland GmbH (docket number 4a O 59/12) and REGO Lighting GmbH (docket number 4a O 108/12), the court found with judgments...

M/A-COM Technology Solutions has entered into a technology transfer and licensing agreement with Global Communications Semiconductors for its 0.5 µm, 0.25 µm and 0.15 µm GaN technologies to be ported to MACOM’s Massachusetts facility. The agreement establishes MACOM as the only company in the industry that can provide customers with true copy exact dual sourcing for high performance GaN devices.

Molex Incorporated further expands its Stac64 product family with the introduction of the 14-circuit hybrid connection system. The 14-circuit Stac64 hybrid system comprises a 14-circuit hybrid receptacle connector and mating 14-circuit vertical and right-angle headers to meet the increasing terminal requirements for expanding in-vehicle functionality in automotive and commercial vehicles. Typical applications include in-car entertainment systems,...

In a, thankfully, air-conditioned ballroom in a hotel in Austin, Texas, National Instruments hosted its Graphic Design Achievement Awards 2013. Winning companies used LabView to monitor and manage systems from CERN’s particle accelerator for ion beam cancer therapy to valve leakage detection in industrial pumps.

Fujitsu Semiconductor Limited today announced the release of MB51T008A, a silicon substrate-based, gallium-nitride (GaN) power device that features a breakdown voltage of 150 V. Sample quantities of the new product will be made available starting July 2013. The new device, which enables normally-off operations, is capable of achieving roughly one half the figure of merit (FOM) of silicon-based power devices with an equivalent breakdown voltage. W...

Saelig has announced MAGIC PLW111010 PLCC-2 SMT white light LEDs. These GaN-on-Silicon LEDs are the first commercially available solid state illuminators manufactured on 6" GaN-on-Silicon substrates. With production yields of greater than 95% and fast processing times, a significant cost advantage can be offered over Sapphire- and Silicon Carbide-based LED solutions for a wide range of industry-standard solid-state illumination and indicator appl...

Yole Développement announces the new reverse costing study,SORAA: Tri-LED & Lightchip. This analysis has been developed by System Plus Consulting, Yole Développement’s partner.

Couldn’t get to Nuremberg in time for this spring’s PCIM (power control, intelligent motion) exhibition? Here’s a digested summary of the most compelling new products and other interesting developments from the show. Sally Ward-Foxton rounds up the most interesting MOSFETs, excellent IGBTs and the best of the rest from PCIM 2013.