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GaN Systems has appointed US engineering consultancy Vqdot as an Applications Development Partner. Vqdot specialises in the development and testing of high-performance power supplies and will partner with GaN Systems to advise companies on the use of gallium nitride power semiconductors across a broad range of applications.

M/A-COM Technology Solutions took the wraps off a new GaN unmatched wideband transistor in SOT-89 package that is ideally suited to 50 V operation in driver and power applications, at European Microwave Week 2013 in Nurnberg, Germany.

At European Microwave Week 2013 in Nurnberg, Germany, M/A-COM Technology Solutions announce a new GaN unmatched wideband transistor in SOT-89 package that is ideally suited to 50 V operation in driver and power applications. The MAGX-000040-00500P is an effective solution for customers who need a reliable power device with wideband performance and high voltage operation.

Fabricated using a GaN-on-Si process, the new 1W TL1F2 LEDs from Toshiba Electronics Europe offer a cost-competitive alternative to current LED packages which allow manufacturers of general purpose and industrial LED lighting to drive down costs. These are the first devices to be released in Toshiba's second generation of LETERASTM white LEDs.

GaN Systems Inc, a leading developer of gallium nitride power switching semiconductors, is presenting a paper on new wide-bandgap semiconductors and their role in transforming automotive power electronics at the Electric & Hybrid Vehicle Conference & Expo in Michigan 17 - 19 September. Manufacturers are currently designing vehicles to be launched onto the market in 2018, coinciding with the timeframe leading forecasters are predicting tha...

M/A-COM Technology Solutions introduce the newest entry in its portfolio of GaN in Plastic packaged power products. Optimized for L-Band commercial air traffic control, military radar, and long range perimeter monitoring applications at 1.2 to 1.4 GHz, MACOM’s new 2-stage, fully matched GaN in Plastic power module, theMAMG-001214-090PSM, scales to peak pulse power levels of 100W in a 14 x 24 mm package size – delivering twice the powe...

Yole Développement is pleased to announce the third edition of one of its best seller: Status of the LED Industry. In this 2013 edition, Yole Développement mixes technical analysis, market trends, forecasts, geographical analysis...and much more! With a first part dedicated to general lighting, and a second one focused on other applications, discover the different format of the report and choose the part you need!

M/A-COM Technology Solutions introduce a new ceramic GaN on SiC HEMT Power Transistor for avionics applications. The MAGX-001090-600L00 is a gold-metalized, matched GaN on Silicon Carbide, RF power transistor optimized for pulsed avionics applications, such as secondary surveillance radar in air traffic control systems.

GaN Systems is exhibiting at the 15th ECCE European Conference and Exhibition taking place in the historic city of Lille, France from 3 – 5 September. GaN Systems develops the most complete range of gallium nitride power switching solutions available and is focussed on the easy adoption of gallium nitride by design and systems engineers.

Broadcom Foundation and Society for Science & the Public announce the winners of the 2013 Broadcom MASTERS national STEM competition for sixth, seventh and eighth graders, in which 14 girls and 16 boys from 17 states competed. Broadcom Foundation and SSP also announced top winners in the categories of Science, Technology, Engineering, Math and Rising Stars.