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Tony Astley has been appointed as Director of European Operations at GaN Systems, with immediate effect. Having overall responsibility for all aspects of GaN Systems’ business in Europe, the Middle East and Africa, Astley will further develop its presence in the region (representing almost 20% of the world’s total market for power device sales).

TheMXP series of multicoax interconnection products, fromHUBER+SUHNER, has been expanded with the addition of theMXP18 connector. The connector series isdesigned for the high speed digital testing market with the MXP18, having been introduced to meet the need for multiport testing interconnectivity between DC to 18GHz.

Firmly establishing the company at the forefront of GaN (Gallium Nitride) technology, Transphorm has announced that it will present two “Industry Sessions” presentations at APEC 2014. At last year’s APEC show, Transphorm introduced what they believe to be the first and only 600V JEDEC-qualified GaN-on-Silicon HEMTs (high electron mobility transistors).

At APEC 2014, Transphorm announce what they believe to be the industry’s first 600V GaN-based, low-profile PQFN products and the expansion of its product portfolio in the industry-standard TO220 packages. The 600V GaN HEMTs (high electron mobility transistors) utilise the company’s patented, high-performance EZ-GaN technology.

Aimed at thesurging wearable electronics market, thePLW138003 is Plessey'ssmallest packaged MaGIC (Manufactured on GaN-on-Si I/C)LED.The PLW138003 is a white LED in a 1005 SMT package designed specifically for the demand for ever smaller LED components producing highly collimated light. Plessey's dotLEDs weighing 0.2 milligrams and a profile of 0.2mm are an industry-leading option for any wearable application with LED content.

GOEPEL electronic has extended its ChipVORX embedded test instruments for universal frequency measurement based on special FPGA soft macros. The instruments are modular IP to control chip embedded instruments which now allow FPGA-assisted test of differential clock signals and the measurement of frequencies directly inside the system application.

The MAGX-000035-01000P is the latest addition to the GaN in Plastic series from M/A-COM. The device is a 10W GaN on SiC unmatched power transistor, which offers broad RF frequency capability, reliable high voltage operation, and smallest footprint in plastic-packaging technology.

Plextek RF Integration has announced that it has been selected by Cree as a preferred design resource to provide third party design services to Cree’s European foundry customers.

MACOM announced a new GaN on SiC HEMT Power Transistor for pulsed power applications.

Anintelligent power driver for SiC, GaN and silicon power switches has been announced with the company, X-REL Semiconductor, claiming the device is the industry's first power switch driver able to operate at extreme temperatures. Themonolithic, isolated, intelligent power driver is targeted atmotor drive, power conversion and high-voltage communication applications.