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Bret Daniels has joined Transphorm as its V.P. of Sales, assuming responsibility for growing Transphorm’s revenue as more customers move their designs into production. This appointment validates Transphorm’s leadership in providing GaN-based power conversion in power supplies and adapters, motor drives, solar panels and electric vehicles.

In the company's latest report, 'LED Frond-End Manufacturing Trends', Yole Développement provides a better understanding of the current process flow, process steps and technological trends in LED front-end manufacturing. Pars Mukish, Technology and Market Analyst, details the importance of cost reduction and evaluates emerging substrates and related technologies including GaN-on-GaN LEDs and GaN-on-Si LEDs.

Designed for use incivilian and military radar pulsed applications, theMAGX-000035-045000pulsed power transistor has been launched byM/A-COM Technology Solutions.TheMAGX-000035-045000is a gold-metalized unmatched GaN on Silicon Carbide RF power transistor optimized for high performance RF applications such as L-Band and S-Band radar.

At PCIM Europe 2014, due to be heldat the Nuremberg Exhibition Center, Nuremberg, Germany,International Rectifier will exhibit their latestpower management solutions.IR engineering and technical sales staff will demonstrate IR’s latest energy-saving and high power density enabling technologies and products at the IR booth, Hall 9, Stand 413.

Arrow Electronics has availability and full design support capabilities for the expanded line of MLS flatpack aluminum electrolytic capacitors from Cornell Dubilier. The new additions to the MLS Series includes a high-vibration package (HVMLS) and a high-reliability burn-in option (HRMLS).

Jim Witham has been appointed to the role of CEO at GaN Systems. Witham has over thirty years’ experience in business development, international sales and marketing and operations management and joins GaN Systems from Neoconix.

Charles Bailley has been appointed as the Senior Director, Technical Marketing, Asia, at GaN Systems. Effective March 3rd, Bailley’s appointment is part of the company’s strategy of increasing headcount worldwide to support early adopters of GaN-based devices as automotive, industrial and enterprise equipment manufacturers replace legacy silicon-based semiconductors with GaN power devices to achieve higher efficiency, power density an...

EpiGaN announced that Dr. Marianne Germain, CEO and co-Founder, will deliver a presentation at the CS International Conference 2014 in Frankfurt, Germany. Entitled “Industrial manufacturing of GaN epiwafers for High Voltage and RF markets”, the presentation will detail how an industrial material source of GaN epiwafers, truly enabling expected device performance, is required, as the GaN electronics market is predicted to significantly...

M/A-COM Technology Solutions announces an IP licensing program for Gallium Nitride (GaN) on Silicon technology. The company has recently highlighted two areas critical to achieving the goal of enabling the mainstream adoption of GaN as a large-scale RF semiconductor technology across the industry.

The GaN-on-Si Substrate Technology and Market for LED and Power Electronics report has been released by Yole Développement. Yole reviews the GaN-on-Si technology growth, challenges and solutions and analysts Dr Hong Lin and Dr Eric Virey give an overview of GaN-on-Si epiwafer playground. This report also provides an in-depth analysis of the GaN-on-Si technology for LED and power electronic applications, including technology and cost aspect...