Search results for "transistor"
Laser thermal anneal boosts 3D memory performance
imec and Excico have successfully demonstrated the application of laser thermal anneal in vertical polysilicon channel devices for 3D memory, resulting in an increased current. Compared to conventional polysilicon channel, the larger grain size of the laser recrystallized polycrystalline channel material offers up to 10 times higher read current and 2.5 times steeper sub-threshold slope. Providing a way to higher stacking, this enableshigher bit ...
Power analysis options added to R&S oscilloscopes
Rohde & Schwarz has added options to its RTO and RTM oscilloscopes covering power analysis and a new differential wideband probe to its portfolio of solutions for clocked power supplies. Developers can automatically perform all major quality analyses and document the measurement results.
Ultra-wideband Doherty amplifier reference design
NXP's ultra-wideband Doherty reference design has been updated. Now AWR Microwave Office design environment ready, the updated reference design incorporates the BLF884P and BLF884PS transistors for ultra-wideband Doherty power amplifiers (which operate from 470 to 806 MHz) and a 70 W DVB-T UWB LDMOS reference design (which uses NXP’s patent-pending architecture capable of operating over an ultra-wideband spectrum in the UHF broadcast spectr...
Tackling EMC in medical power supplies requires innovative design
All modern power supplies are of the switched-mode type, as these are smaller and more efficient than the old linear types. Switched-mode supplies, however, generate electromagnetic interference, both conducted and radiated, and require the incorporation of EMI filters.
TSMC awards Synopsys "Partner of the Year 2013"
Synopsys announce that TSMC awarded Synopsys its Open Innovation Platform "Partner of the Year 2013" for joint development of 16-nanometer FinFET design infrastructure. The award recognizes Synopsys' broad and deep technical expertise and shared commitment to the development and delivery of TSMC's 16-nm Reference Flow, validated on a quad-core ARM Cortex-A15 mobile processor design
50V LDMOS transistors for UHF TV power amplifiers
Infineon Technologies introduce 50V LDMOS transistors designed for use in UHF TV broadcast transmitters, including one device providing the highest peak power output available for this application. The higher power output across the entire 470 – 806 MHz TV broadcast band gives amplifier designers the option to use fewer transistors to achieve target output power, which translates to cost savings due to lower component count and higher relia...
Diodes Incorporated’s LED Driver Enables High Power Factor Retrofit LED Lamps
Diodes Incorporated has announced the AP1684, a power factor-corrected AC-DC LED driver suiting a variety of offline LED lamp types, including E26, GU10, PAR and T8. Using pulse-frequency modulation technology and operating in boundary-conduction mode, this device provides tight current regulation to an accuracy of ±2%, while achieving a power factor of .97 and THD of less than 20%.
PWM IC reduces costs in 5V/2A smartphone chargers
Dialog Semiconductor introduce the industry’s first digital pulse width modulation controller that can easily and efficiently drive low-cost, 10W power bipolar junction transistor switches to reduce the BOM cost in 5V/2A smartphone adapters and chargers. The new iW1679 allows designers to replace field effect transistors with lower-cost BJTs and address the market trends for lower standby power and higher light-load and active average effic...
Renesas announce 4MB advanced low-power SRAM devices
Renesas Electronics have today announced the introduction of 12 new product versions in the RMLV0416E, RMLV0414E, and RMLV0408E series of Advanced Low-Power SRAM, the company’s flagship static random access memory devices. The new memory devices have a density of 4 megabits and utilize a fine fabrication process technology with a circuit linewidth of 110 nanometers.
First surface mount L-band 90W GaN power module
M/A-COM Technology Solutions introduce the newest entry in its portfolio of GaN in Plastic packaged power products. Optimized for L-Band commercial air traffic control, military radar, and long range perimeter monitoring applications at 1.2 to 1.4 GHz, MACOM’s new 2-stage, fully matched GaN in Plastic power module, theMAMG-001214-090PSM, scales to peak pulse power levels of 100W in a 14 x 24 mm package size – delivering twice the powe...