Search results for "transistor"
DC/DC converter features new HiSAT-COT control method
Torex Semiconductor have today announced a new 1.5A synchronous step-down DC/DC converter featuring a new HiSAT-COT (Constant On Time) control method. The HiSAT-COT control method, featured in the XC9260/61 series, provides less fluctuation in oscillation frequency against load and input voltage when compared to standard COT control.
Power source units have generation and measurement functions
Two new instruments have been added to the Yokogawa GS610 and GS820 family of source measure units: the GS610 Model 7655 is a battery simulator unit which simulates the internal resistance changes of batteries as an aid to failure analysis, while the GS820 Models 765601/Z and 765602/Z are 50 V output versions for testing higher-voltage components such as LEDs and power transistors.
Fanless Box PC for information display in harsh environments
Vecow have announced the release of the latest ABP-2000 Fanless Advanced Box PC series which are powered by the Intel Quad-Core Atom E3800 processor family running at 1.91GHz. Operating over a wide temperature range from -25°C to +70°C, the ABP-2000 series provides ultimate computing performance, energy efficiency, powerful graphics and various I/Os.
Optocoupler guarantees minimum BCVEO of 80V
A new optocoupler from Lite-On is now available from distributor Rutronik. It consists of a high efficient AlGaAs light emitting diode and a high speed optical detector. This design provides excellent AC and DC isolation between input and output sides of the optocoupler.
World’s first III-V FinFET devices monolithically integrated on 300mm Silicon Wafers
A successful demonstration of III-V compound semiconductor FinFET devices integrated epitaxially on 300mm silicon wafers, has been completed by Imec. Done through a unique silicon fin replacement process, Imec's demonstration signals progress toward 300mm and future 450mm high-volume wafer manufacturing of advanced heterogeneous CMOS devices, monolithically integrating high-density compound semiconductors on silicon. The breakthrough not only en...
First transistors in 1.1-mm² low-profile DFN package
NXP Semiconductors have today announced the industry's first transistors in a 1.1-mm x 1-mm x 0.37-mm low-profile DFN package. Consisting of 25 types, the new portfolio includes low RDSon MOSFETs, low saturation transistors and general purpose transistors that boost current capabilities up to 3.2 A. Ideal for power management and load switches in portable and space-constrained applications, the new transistors feature ultra-small form factor and...
EuMW2013: 5W CW GaN transistor in SOT-89 package
M/A-COM Technology Solutions took the wraps off a new GaN unmatched wideband transistor in SOT-89 package that is ideally suited to 50 V operation in driver and power applications, at European Microwave Week 2013 in Nurnberg, Germany.
MACOM 5W GaN power transistor in ultra-small package
At European Microwave Week 2013 in Nurnberg, Germany, M/A-COM Technology Solutions announce a new GaN unmatched wideband transistor in SOT-89 package that is ideally suited to 50 V operation in driver and power applications. The MAGX-000040-00500P is an effective solution for customers who need a reliable power device with wideband performance and high voltage operation.
O-S-D market growth slows to less than 1% in 2013
IC Insights announce the October Update to The McClean Report, offering a unique analysis of the total semiconductor market through 2017. Including a detailed look at 33 IC product categories by market size, unit shipments, and average selling price, the Update provides thorough coverage of the often overlooked, but very important, optoelectronic, sensor/actuator, and discrete portion of the semiconductor industry.
Toshiba photocouplers boast ultra-minature packages
Ideal for use in compact switching power supplies, home appliances and industrial devices, Toshiba Electronics Europe's new low input current-type transistor output photocouplers come in ultra-miniature SO6 and SO4 packages and support operation in temperatures of up to 125°C.