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A power transitor, optimised for L-Band radar applications, has been introduced by M/A-COM Technology Solutions. The MAGX-001214-650L00 is a gold-metalized, pre-matched, GaN SiC HEMT tranistor which the company claims offers the highest peak power in the industry for pulsed L-Band radar applications.

GaN in Plastic power modules, claimed to have advantages over ceramic-packaged flange-mount components, have been released by MACOM.Optimised for pulsed Avionics applications in the 960-1215MHz band, the MAMG-001214-090PSM 2-stage, fully matched GaN surface mount power modules scale to peak pulse power levels of 100W in a 14x24 mm package size.

GaN Systems Inc has moved into its new headquarters and R&D facility at 1145 Innovation Drive, Ottawa, Canada. Located at the heart of Kanata’s high technology community, the move was necessitated by the company’s expansion over the past twelve months and plans for continued rapid growth as GaN devices replace legacy silicon-based semiconductors in power conversion and control applications worldwide.

A GaN in Plastic power module has been added to M/A-COM's existing portfolio of GaN in Plastic power module products. The module is optimised for pulsed Avionics applications in the 960 to 1215 MHz band, and scales to peak pulse power levels of 100W in a 14 x 24mm package size.

A portal machining centre with gantry drive for the production of large, high accuracy components has been launched by SHW Werkzeugmaschinen. The machine features a new, dynamic toolchanger that exchanges HSK A 100 or equivalent tools while machining is in progress, and an operating platform that can travel with the spindle into the working area. Both are believed to be world firsts.

At the 2014 Machine Building Show at the NEC in Birmingham from 30th September to 1st October, igus will be showcasing its product portfolio including the drylin W linear guide, the E4.1 light energy chain and the readychain rack. Offering excellent wear and friction properties, the modular drylin W range offers a complete linear drive solution, integrating DC motors, linear switches and chainflex motor cables.

Diamond Microwave is extending its range of GaN-based solid-state power amplifiers (SSPA) to include a 2 - 6GHz model that can be operated in either pulsed or CW mode.

GaN and Silicon really shouldn’t go together but several companies are making it work in order to reap the cost benefits, as Sally Ward-Foxton reports.

New semiconductor materials could mean 50% less energy loss in switched-mode power supplies for PCs, flat-screen televisions, servers and telecommunications systems and could make solar inverters even more compact and cost-efficient. The partner companies of the research project “NeuLand” have developed highly-integrated components and electronic circuits which made it possible to reduce energy loss in circuits by 35% as early as duri...

PCIM 2014: Five normally-off 100V GaN transistors and a 650V normally-off GaN transistor family have been introduced by GaN Systems. The GS61002P, GS61004P, GS61006, GS61008P and GS71008P areoptimised for high speed designs, with low on resistance and total gate charge.