Search results for "gan"

At European Microwave Week (EuMW), 5th to 10th October in Rome, Italy, M/A-COM Technology Solutions has announced it will exhibit in Booth 131. At the show MACOM willshowcase the industry’s broadest GaN product portfolio, a live GaN on Si demo and a suite of products aimed at applications such as industrial, scientific, medical, E-Band point-to-point wireless and X-Band radar.

M/A-COM Technology Solutions (MACOM)will showcase a broad GaN product portfolio along with a live GaN on Si demo at EuMW 2014 in Rome (Oct 7-9). It will also feature a suite of new products aimed at applications spanning industrial, scientific, medical, E-Band point-to-point wireless and X-Band radar.

At EPE ’14 ECCE Europe, 26th to 28thAugust in Finland, GaN Systems will present its latest devices, including a series of normally-off 100V GaN transistors and a low inductance, thermally-efficient 650V transistor family. The power semiconductors target applications such as onboard battery charging, high-voltage DC/DC and AC/DC conversion, UPS, air-conditioning, home appliances, heavy-duty battery-operated power tools and E-bikes.

Toshiba Electronics Europe has expanded its LETERAS family of white LEDs, introducing the TL1L3 series. The 1.0W LEDs combine cost-effective gallium nitride-on-silicon (GaN-on-Si) chips with an industrial standard 3535 lens type package with a footprint of 3.5x3.5mm and a height, including lens, of just 2.42mm.

To complement its range of storage systems and controls, KASTO has upgraded its warehouse management software from KASTOlvr to KASTOlogic and in so doing has further improved its functionality. Core functions consist of an intuitive graphical user interface, an interface to the customer’s host computer system and a dashboard for overall visualisation of warehouse management.

A motorised XYZR gantry scanning system has been supplied to the Imperial College Non-Destructive Evaluation Group by LG Motion. The system has been supplied for a research project to evaluate critical aspects of a high temperature strain monitoring technique for use in power station steam lines and associated components. The system features combined vertical and rotary positioning axis that includes the ability to measure its force, position and...

Designed for civilian and military radar pulsed applications, M/A-COM Technology Solutions has introduced two GaN on SiC HEMT RF power transistors. The MAGX-000035-015000 and MAGX-000035-01500S transistors provide 17W peak output power (typical) with 15.5dB power gain and 63% efficiency.

GaN devices for power electronics are on the verge of big growth, but what are the driving forces behind this growth? Sally Ward-Foxton investigates for ES Design magazine.

To providefeedback on each position setting and selection,PIHER Sensors and Controls has updated itsPT-6 carbon potentiometer to include detents. Includingup to 10 equally spaced positions, the detents incorporatea spring feature into the potentiometer's rotary action. This enables a 'click' action viaresistance to rotation at predetermined angles.

Infineon has acquired International Rectifier for $3bn. The acquisition creates a behemoth in power management technology. Infineon expands its product portfolio, gets access to International Rectifier’s acclaimed Gallium Nitride on Silicon (GaN) process for power semiconductors, gains a higher profile in the US as well as a larger regional footprint particularly in Asia/Pacific.