Search results for "transistor"
Modules fulfil single, dual or multi-chip die design demands
Engineered for high frequency and pulse-load applications, theSOT-227 standard power modules have been launched byAmerica Semiconductor. The modulesmeet the requirements of single, dual or multi-chip die designs, the modules are offered in single pad (Pad A) and dual pad (Pad D and E) frame types.
University collaboration on materials awarded ‘outstanding'
SmartKem has announced that a recent Knowledge Transfer Partnership (KTP) with Bangor University, UK, has been awarded a grade of ‘Outstanding’ by the Technology Strategy Board.Working with Bangor University’s School of Electronic Engineering, academics from the Organic Electronics Group characterised and validated SmartKem’s advanced semiconductor materials in transistor form as part of its material development program.
Split-gate memory Cell boasts 16nm gate length
CEA-Leti has fabricated ultra-scaled split-gate memories with gate length of 16nm and demonstrated their functionality, showing good writing and erasing performances with memory windows over 6V.The devices provide several benefits especially for contactless memory applications, such as enlargement of the memory window and increased functionality. Also because of an optimised fabrication step, the devices allow better control of spacer memory gate...
Opto market forecast to improve
Total O-S-D (Optoelectronics, Sensors/Actuators, and Discretes) sales rose to an all-time high of $58.6bn in 2013, according to information from IC Insights’ 2014 'O-S-D Report - A Market Analysis and Forecast for Optoelectronics, Sensors/Actuators, and Discretes'. This just beat the previous high of $58.2bn in 2012, when revenues also grew very slightly from record levels in 2011.
Printed Electronics Europe to debut flexible, multi-functional timer
Led by IDTechEx, a consortium of partners will launch the world's first flexible timer based on printed electronics at the IDTechEx Printed Electronics Europe event in Berlin, April 1-2.The device consists of an electronic logic circuit implemented with thin film metal oxide transistors, powered by a printed battery, and integrated onto a paper substrate. It has four timing sequences and is designed for multi-functional use across four different ...
Space-saving packages for regulator transistors
Designed for 48V circuits in networking, telecomms and PoE equipment, Diodes Incorporated announce new space-saving package options for its ZXTR2000 series of high-voltage linear regulator transistors. Device inputs are actually tolerant up to a maximum of 100V, meaning all regulator transistors offer plenty of headroom in the event of transient over-voltage conditions.
JEDEC-qualified 600V GaN-on-Silicon family expanded
At APEC 2014, Transphorm announce what they believe to be the industry’s first 600V GaN-based, low-profile PQFN products and the expansion of its product portfolio in the industry-standard TO220 packages. The 600V GaN HEMTs (high electron mobility transistors) utilise the company’s patented, high-performance EZ-GaN technology.
MACOM Announces New 150 W GaN on SiC HEMT Power Transistor
MACOM announced a new GaN on SiC HEMT Power Transistor for pulsed power applications.
Significantly reduce charge times in USB AC/DC wall chargers
Using the company's intelligent rapid charge digital algorithm and digital primary-side control technology, the iW1680 AC/DC rapid charge controller can significantly reduce charge times in USB AC/DC wall chargers with no bill of materials cost premium over slower conventional charging technologies.
500W RF transistor optimised for radar and avionics
Designed for L-Band pulsed radar applications, theMAGX-000912-500L00 from M/A-COM is a GaN on SiC HEMT Power Transistor. The gold-metalized transistor has been optimised for pulsed avionics and radar applications.