Search results for "SiC"
PCIM Europe 2024
The PCIM Europe, the international conference for power electronics, is pleased to publish its comprehensive conference programme for the upcoming event.
Infineon introduces CoolSiC MOSFET G2
Infineon Technologies AG is heralding a new era in power systems and energy conversion with the introduction of its advanced silicon carbide (SiC) MOSFET trench technology.
3rd gen SiC MOSFETs with reduced switching losses
Toshiba Electronics has launched the TWxxxZxxxC series of 10 silicon carbide (SiC) MOSFETs based upon their third-generation technology.
1200V power modules target EV, solar applications
Offering what it describes as unmatched power density and efficiency, Qorvo says its latest 1200V SiC half-bridge and full bridge power modules are set to revolutionise the industries of electric vehicle (EV) charging, solar inverters, and industrial power supplies.
Vishay showcases passives and semis at APEC 2024
Vishay Intertechnology is showcasing its broad portfolio of passive and semiconductor solutions at APEC 2024 in Long Beach, California (February 25-29).
Infineon launches CoolSiC MOSFET 750V G1 product family
Infineon Technologies has unveiled its 750V G1 series of discrete CoolSiC MOSFETs, designed to cater to the growing requirements for enhanced efficiency and power density in both industrial and automotive power systems.
SiC MOSFETs: Gate Drive Optimization
For high−voltage switching power applications, silicon carbide or SiC MOSFETs bring notable advantages compared to traditional silicon MOSFETs and IGBTs. Switching high−voltage power rails in excess of 1,000 V, operating at hundreds of kHz is non−trivial and beyond the capabilities of even the best superjunction silicon MOSFETs. This paper highlights the unique device characteristics associated with SiC MOSFETs. Critical ...
SemiQ’s full-bridge compact MOSFET modules
SemiQ has unveiled the latest addition to the company’s QSiC family, the QSiC 1200V SiC MOSFET modules in full-bridge configurations.
SiC MOSFETs: Gate Drive Optimization
For high−voltage switching power applications, silicon carbide or SiC MOSFETs bring notable advantages compared to traditional silicon MOSFETs and IGBTs. Switching high−voltage power rails in excess of 1,000 V, operating at hundreds of kHz is non−trivial and beyond the capabilities of even the best superjunction silicon MOSFETs. This paper highlights the unique device characteristics associated with SiC MOSFETs. Critical ...
Navitas celebrates its ten-year milestone
Navitas marks 10 years of innovation and growth in a broad range of fast-growing markets from ultra-fast mobile charging to AI data centres, renewable energy and EVs.