Search results for "SiC"

FINAT takes pride in announcing that FINAT, as every other year, is one of the leading associations with regard to winning World Label Awards. With 27 categories to choose from and with the diverse range of applications available, it is easier to match the FINAT entries to the World Label Award categories. Hence FINAT normally enters more categories than any other association. FINAT consistently wins several categories mostly in the wine/spirits ...

Silicon Laboratories today introduced a silicon TV tuner solution designed to provide an optimal balance of affordable cost and high performance for TV makers in China and Taiwan. The new Si2155 TV tuner IC extends Silicon Labs’ field-proven and industry-leading silicon TV tuner architecture into high-growth emerging markets for digital TVs and set-top box (STB) products.

NI has announced 3-D vision capabilities in LabVIEW with the new NI Vision Development Module 2012. Engineers can develop a 3-D stereo vision system using any two cameras and can perform advanced inspection and control that uses depth information from 3-D vision technology.

Today, Enel Green Power, Sharp and STMicroelectronics have signed a binding letter of commitment for a project financing agreement for 150 million euros for the development of what will be Italy’s biggest photovoltaic panel factory. The 3Sun equal share joint venture thus enters its operational phase, in line with the agreement signed by the three partners on January 4th, 2010, with its statutory bodies having been appointed today. The goal of ...

Toshiba Corporation today announced that it has developed a gallium nitride (GaN) power field effect transistor (FET) for the Ku-band (12GHz to 18GHz) frequency range that achieves an output power of 65.4W at 14.5GHz, the highest level of performance yet reported at this frequency band. The main application of the new transistor will be in base stations for satellite microwave communications, which carry high-capacity signals, including high-defi...

SemiSouth Laboratories, Inc. has doubled the current rating of its DPAK-packaged silicon carbide diodes from 5A to 10A. The 1200V/10A SDB10S120 features a positive temperature coefficient for ease of paralleling, and temperature-independent switching behavior. Maximum operating temperature is 175degC.

SemiSouth Laboratories today launched its SDP60S120D 1200V, 60A SiC power Schottky diode, which delivers the highest continuous forward current (IF ) of any SiC diode in the world (measured @ Tc of 145degC).

Finetech announces that it sold 12 bonding systems within the past year to prominent university labs and research centers. Of the 12, three systems were purchased by California universities, including a Nanofabrication Facility as well as Electrical Engineering and Physics departments.

Mouser Electronics, Inc. has announced that it has signed a global distribution agreement with Cree.

Power Integrations today announced an agreement with SemiSouth Laboratories to act as a sales representative for SemiSouth’s innovative range of silicon carbide (SiC) diodes and JFETs worldwide with the exception of Europe.