Search results for "transistor"
TFT displays make play for gaming machine market
Leisure and entertainment applications including pay per play casino gaming machines are the target of a range of high performance, wide aspect ratio TFT display modules from KOE. Three displays are available: 6.2in with 640 x 240 pixels, 10.2in with 800 x 256 pixels and 14.9in with 1280 x 242 pixels.
RF power transistors suit radar pulsed applications
Designed for civilian and military radar pulsed applications, M/A-COM Technology Solutions has introduced two GaN on SiC HEMT RF power transistors. The MAGX-000035-015000 and MAGX-000035-01500S transistors provide 17W peak output power (typical) with 15.5dB power gain and 63% efficiency.
Transistor claims to offer highest peak power for radar
A power transitor, optimised for L-Band radar applications, has been introduced by M/A-COM Technology Solutions. The MAGX-001214-650L00 is a gold-metalized, pre-matched, GaN SiC HEMT tranistor which the company claims offers the highest peak power in the industry for pulsed L-Band radar applications.
Bipolar transistors feature proven robustness to radiation
A range of Defense Logistics Agency-qualified JANSR bipolar transistors, suitablefor aerospace and Hi-Rel systems, has been released bySTMicroelectronics. TheJANSR+ series, which has been added to the company's existingJANS / JANSR products,consists of 100krad JANSR high-dose-rate bipolar transistors with an additional 100krad low-dose-rate (100mrad/s) test performed on each wafer.
Primary-side switchers cut cost & improve efficiency
Designed to improve power supply efficiency and performance in5.5W chargers, ADSL adapters and home appliance supplies, Diodes Incorporated introduces an off-line, side-switching controller. The AP3988regulates output voltage using piece-wide pulse frequency modulation, in which analogue levels are represented as fixed-duration pulses of varying repetition rate.
RF power solutions target advanced wireless infrastructure
Freescale Semiconductor has announced 2nd gen Airfast RF power solutions. The company has claimed that this generation of devices deliver a new level of performance for advanced wireless infrastructure equipment, including GSM/UMTS, CDMA/W-CDMA, LTE, and TD-LTE applications.
100 & 650V GaN power semiconductors on show at EPE ’14 ECCE
At EPE ’14 ECCE Europe, 26th to 28thAugust in Finland, GaN Systems will present its latest devices, including a series of normally-off 100V GaN transistors and a low inductance, thermally-efficient 650V transistor family. The power semiconductors target applications such as onboard battery charging, high-voltage DC/DC and AC/DC conversion, UPS, air-conditioning, home appliances, heavy-duty battery-operated power tools and E-bikes.
RF transistors operate on the 2015 frequency bands
LDMOS RF power transistors, designed for wireless/cellular base stations, have been released by NXP Semiconductors. The Gen9 transistors are aimed at Doherty power amplifiers – symmetric and asymmetric – and have been claimed to show 5% more efficiency within these applications.
Programmable DC power supplies measure standby current levels
The Series 2280S Precision Measurement, Low Noise, Programmable DC Power Supplies from Kethley Instruments are also sensitive measurement instruments with the speed and dynamic range for measuring standby current loads and load current pulses that battery-powered wireless, medical, and industrial devices produce.
EMIR solution aims to create fastest path to design closure
A transistor-level EMIR solution, designated the Voltus-Fi Custom Power Integrity Solution, has been introduced by Cadence. Delivering foundry-certified, SPICE-level accuracy in power signoff, the solution aims to create the fastest path to design closure. Enabled by the company's Spectre Accelerated Parallel Simulator signoff SPICE simulation, the company claims that the solution provides best-in-class accuracy at the transistor level, thereby m...