Search results for "gan"
A reliable coax connection even in challenging environments
Harwinannounces a range of standard layout, multiport coaxial Datamate connectors with 6GHz, 50Ω contacts, suitable for RG178 cables in high reliability applications. The ganged connectors are available from stock with two, four, six or eight contacts.
Toshiba expands GaN-on-Si high power white LED range
Expanding its TL1L4 series of white LEDs, Toshiba Electronics Europe introduces four additions which provide a high luminous flux and are suited to applications such as street and stadium lighting, LED light bulbs and home lighting.
Meije installs Verlinde Eurobloc VT hoists for the renovation of 6 EDF hydroelectric dams on the River Maulde
There are some 2,250 hydroelectric installations of various sizes in Metropolitan France whose power varies from 1,000 watts to several hundred megawatts. 436 of them are operated by EDF. Out of the total installed capacity of 25.4 gigawatts nationwide, EDF produces no less than 20 gigawatts or 13% of the company's total energy production.A smallish watercourse 70 km long whose source is in the commune of Gentioux-Pigerolles (Creuse department) a...
The confidence of the wide band gap industry
In a competitive landscape, Yole Développement points out the serenity of the Wide Band Gap (WBG) market and the confidence of its players: WBG companies are slowly but surely reshaping the industry and accelerate the market adoption with numerous strategic mergers and acquisitions (Cree, Infineon Technologies…) and the development of disruptive solutions.In its latest technology and market analysis, 'GaN & SiC for power electro...
imec extends its GaN-on-Si R&D programme
Nano-electronics research centre imec has announced that it is extending its Gallium Nitride-on-Silicon (GaN-on-Si) R&D programme, and is now offering joint research on GaN-on-Si 200mm epitaxy and enhancement mode device technology.
30W GAN on SIC HEMT operates from DC to 3.5GHz
A new discrete GaN on SiC HEMT from TriQuint / Qorvo is now being shipped by Richardson RFPD with full design support capabilities. The 30W (P3dB) T2G4003532 operates from DC to 3.5GHz and is constructed with TriQuint’s TQGaN25 production process, which features advanced field plate techniques to optimise power and efficiency at high drain bias operating conditions.
Couplers target defence, aerospace applications
The range of Xinger couplers for aerospace and defence applications from Anaren is now being shipped by Richardson Electronics along with full design support. Offering a wide bandwidth range, high isolation/directivity, low insertion loss and ENIG plating finish, these high-reliability hybrid and directional couplers are ideal for aerospace and defense applications where size, weight and power (SWAP) are critical.
GaN - promise to reality
The next generation of power electronics is taking shape, argues Markus Behet, EpiGaN. The wide-bandgap compound semiconductor material is suited for switching devices that operate at high frequencies without suffering major losses.
GaN demos 60A power transistor in China for first time
GaN Systems last week showcased the latest addition to its successful range of E-mode GaN-on-Silicon high power transistors on Booth 4D18 at PCIM Asia in Shanghai. Based on three core proprietary technologies, the GS65516T GaN high-power enhancement-mode device boasts the highest current capability on the market at 60A.
TMD Technologies to exhibit at DSEI 2015
TMD Technologies (TMD) will be showcasing a range of products for the defence and national security market at DSEI 2015. The products on show will include specialised transmitters, amplifiers, Microwave Power Modules (MPMs), high voltage power supplies and microwave tubes for radar, EW, communications, EMC HIRF testing, and other laboratory applications.