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LM5113 enhancement mode GaN FET half-bridge driver demo
Min demonstrates TI's LM5113 5A, 100V half-bridge gate driver for Enhancement mode Gallium Nitride (eGaN) FETs and ultra-efficient, small-footprint power supplies, class D audio amplifiers, hard-switched and high frequency circuits.
Wideband transistor is optimised for DC-2.7GHz operation
A wideband transistor optimised for DC-2.7GHz operation has been introduced by M/A-COM Technology Solutions. The NPT2024, which uses MACOM’s proprietary Gallium Nitride on Silicon (GaN on Si) process, is now sampling. The device supports CW, pulsed and linear operation, boasting output levels up to 200W.
Solid state microwave power module optimised for EW/ECM systems
Following the release of its DSEI Press Preview, TMD is now pleased to announce that it will be giving daily demonstrations of its recent PTS6900 solid state Microwave Power Module (MPM) on Stand S3-255, ADS UK Pavilion, to showcase its exceptional performance.
High linearity gain blocks feature broadband compressed output power
Guerrilla RF has introduced a recent addition to the company’s family of high linearity gain blocks featuring a unique combination of simple-application schematic, flat gain and high compressed output power which operate from near DC up to 4GHz. The GRF2012 and GRF2013 are suitable as cost-effective pre-drivers for today’s state-of-the-art broadband GaN high power amplifiers as well as a multitude of general purpose, high-performance ...
GaN-on-SiC RF transistors pave the way to 5G
Infineon Technologies has introduced the first devices in a family of Gallium Nitride on Silicon Carbide (GaN-on-SiC) RF power transistors at this year's European Microwave Week. As part of Infineon’s GaN portfolio, the devices allow manufacturers of mobile base stations to build smaller, more powerful and more flexible transmitters.
EuMW 2015: Wideband transistor optimised for DC to 2.7GHz operation
A wideband transistor optimised for DC to 2.7GHz operation and built using proprietary 4th generation GaN on Silicon (GaN on Si) process is sampling today. The device was announced by MACOM at European Microwave Week in Paris. This GaN on Si HEMT D-Mode transistor is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/UHF/L/S-band radar.
Plessey wins £6.7m grant for LED production expansion
Plessey has announced that the Regional Growth Fund (RGF) has officially granted £6.7m towards the expansion of the Plessey LED manufacturing facility in Plymouth, England. Solid state lighting forms a significant part of global efforts to reduce energy consumption and greenhouse gas emissions.
Cree renames Power and RF division: Wolfspeed
Cree has announced that Wolfspeed is the latest name for the Power and RF division of Cree. The company announced in May that it would separate the business into a standalone company. Founded upon the mission to liberate power and wireless systems from the limitations of silicon, Wolfspeed enters the marketplace as a well-established, entrepreneurial growth company with a focused team, a profitable business and more than 28 years of industry-lead...
Enerpac Completes Testing on World’s Largest Offshore Gantry Crane
Enerpac has completed testing of the world’s largest offshore gantry crane at its Hengelo manufacturing facility in the Netherlands. The crane will be used in the construction of a 5,400 meter bridge for an offshore highway on Reunion Island by French consortium Bouygues Travaux Publics, VINCI Construction Grands Projets, Dodin Campenon Bernard and Demathieu Bard Construction. The coastal highway, Route du Littoral, will connect Saint Denis...
A flesh approach to making gaming characters more lifelike
A new technique will capture the subtle deformations in human skin and translate them into more realistic computer characters.