Search results for "SiC"
Silicon Carbide Schottky Diodes from STMicroelectronics
Ordinary silicon diodes used in switched-mode power supplies lose up to 1% efficiency by not turning off immediately, but STMicroelectronics claims to be among the first companies to introduce silicon carbide (SiC) diodes that save this energy normally lost during switching.
LAST POWER Project Aims to Put Europe First in New Power Semiconductor Technologies
The partners in a new publicly-funded European research project today announced details of the multinational/multidisciplinary program called LAST POWER (‘Large Area silicon carbide Substrates and heTeroepitaxial GaN for POWER device applications). The aim of this important 42-month ENIAC (European Nanoelectronics Initiative Advisory Council) project is to provide Europe with strategic independence in the field of wide band gap (WBG) semiconduc...
STMicroelectronics and Digi-Key Encourage Engineering with the Launch of Design Contest for Students
Electronic components distributor Digi-Key Corporation, recognized by design engineers as having the industry's broadest selection of electronic components available for immediate shipment, and STMicroelectronics, a leading supplier of microelectromechanical systems (MEMS) for consumer and portable applications, today announced an exciting design contest for engineering students based on ST’s iNEMO multi-sensor inertial measurement unit (IMU).
SENSOR ERUPTS WITH VOLCANIC DATA
The secrets of climate change and the formation of giant lava flows on Mars may soon be revealed to a British professor and his research team, as they investigate the lava flows from Mount Etna.
Change of Guards at FINAT, Newly appointed president Kurt Walker shares his vision on FINAT’s strategy today and tomorrow
FINAT, the world-wide association representing the interest of the self-adhesive labelling industry, announces that Kurt Walker has been appointed new president for FINAT at their annual congress in Sicily this year. Kurt Walker takes over the presidency from Andrea Vimercati to steer FINAT for the next two years. Mr Walker (°1950), currently CEO at tesa Bandfix Switzerland, became a member of the FINAT board in 1999. Until now he took up his...
NMI & IMAPS-UK have announced the line up for their iPower Technical Conference, which takes place at the WMG, University of Warwick on 30 November & 1 December 2011.
The two-day event and networking dinner, supported by Dyson, will focus on how future products can integrate interconnectivity, intelligence and thermal management to better meet the needs of renewable power generation, electric vehicles, smart transportation systems and other applications. Presentations will be given on scenario and application directions; power electronics technology developments; materials and processes; and manufacturing and...
Cree GaN HEMT Transistors and MMIC Deliver Industry-Leading Power and Efficiency for S-Band Radar Applications
Cree, Inc. will showcase its latest packaged GaN HEMT power transistors and high power amplifier (HPA) MMIC in the 2.7-3.5 GHz range (S-Band) at the 2011 IEEE International Microwave Symposium held June 7-9 in Baltimore. These products offer the industry’s best-known combination of power and efficiency, achieving typical power-added efficiencies (PAEs) of 60%. This results in a reduction in power consumption of up to 20% over existing solut...
SemiSouth lance une gamme de diodes Schottky SiC de puissance comprenant les composants de plus fort courant de l’industrie
SemiSouth Laboratories, Inc., fabricant leader de dispositifs en carbure de silicium (SiC) pour applications de conversion et gestion d’énergie à forte puissance et haut rendement en environnement difficile, introduit une gamme étendue de diodes Schottky de puissance ; cette gamme inclut notamment la diode SDP30S120 de courant nominal de 30 A, qui est le dispositif 1200 V en boîtier TO-247 de plus fort courant de l’industrie.
Des JFET SiC de SemiSouth destinés à l’audio haut de gamme
SemiSouth Laboratories, le fabricant leader de transistors en carbure de silicium (SiC) pour les applications de gestion et de conversion d’énergie à haute puissance et rendement élevé, a lancé une nouvelle famille de JFET SiC économiques présentant une très bonne linéarité qui sont destinés à des applications audio de haut de gamme.
semiSemiSouth introduit le transistor SiC de puissance de plus faible résistance du marché, pour une gestion plus efficace de l’énergie
A 45 mΩ et 1200 V, ce JFET normalement fermé en carbure de silicium offre une commutation extrêmement rapide ; sans courant de queue, les pertes de commutation sont de quatre à dix fois plus basses que les commutateurs 1200 V concurrents