Search results for "igbt"
Automotive, 1.5-W, 24V-Vin, regulated, 3-kVRMS isolated DC-DC module with integrated transformer
UCC14240-Q1 is a high isolation voltage DC/DC module designed to provide power to IGBT or SiC gate drivers. The high-accuracy output voltages provide better channel enhancement for higher system efficiency without over-stressing the power device gate. The module integrates a transformer and DC/DC controller with a proprietary architecture to achieve high efficiency with very low emissions.
New Half-Bridge Gate Drivers
High voltage, high speed half-bridge gate drivers are efficiently driving two N-Channel MOSFETs or IGBTs. The floating high-side switch is operated in bootstrap configuration up to 600VDC.The logic inputs are compatible to standard TTL and CMOS levels down to 3.3 V.
A Guideline on the Usage of an Isolated Gate Driver to Efficiently Drive SiC MOSFETs
This application note focuses on optimization the design of gate driving voltage for speed to minimize switching losses and to get the full benefit of the devices.
Dual gate drivers from STMicroelectronics optimise SiC and IGBT switching circuits
Two dual-channel galvanically-isolated gate drivers for IGBTs and silicon-carbide (SiC) MOSFETs from STMicroelectronics save space and ease circuit design in high-voltage power-conversion and industrial applications.
Leapers Semiconductor to showcase latest SiC power modules at PCIM Europe 2022
Wuxi Leapers Semiconductor Co., Ltd. (Leapers Semiconductor) will present full silicon carbide (SiC) power module portfolio during PCIM Europe 2022 in Nuremberg, Germany.
Digi-Key at Embedded World 2022 with Microchip
At embedded world 2022, on the Digi-Key booth, Paige West speaks with Marc Rommerswinkel, Business Development Manager (EMEA), SiC-Power Solutions, Microchip about Microchip’s Silicon Carbide solutions and what makes the company stand out from the crowd.
IoT low power solutions aired in eBook
In collaboration with ROHM Semiconductor a new eBook that focuses on efficient components and technologies for use in low-power solutions for industrial Internet of Things (IoT) applications has been published by Mouser Electronics.
SiC FETs suit 800 V bus architectures
In stock at distributor Mouser Electronics are the UF4C and UF4SC 1200 V silicon carbide (SiC) FETs from UnitedSiC (now Qorvo).
Infineon CoolSiCTM MOSFET for 650V at Rutronik
Infineon's CoolSiC MOSFETs use an optimised trench semiconductor process that enables both the lowest losses in the application and the highest reliability in operation.
Next-gen silicon carbide inverter launch
Electrification specialist, Equipmake, has launched a next-generation silicon carbide inverter, which can deliver a step-change in the performance of all electric vehicles.