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The TMS320F2838x (F2838x) is a member of the C2000 real-time microcontroller family of scalable, ultra-low latency devices designed for efficiency in power electronics, including but not limited to: high power density, high switching frequencies, and supporting the use of GaN and SiC technologies.

Texas Instruments (TI) has introduced the industry’s first 650V three-phase GaN IPM (Integrated Power Module) for 250W motor drive applications on the opening day of the PCIM exhibition in Nuremberg (June 11-13).

PowerUP Asia 2024, a two-day virtual conference focused on power semiconductor technologies and industry developments in Asia, opens tomorrow, June 11.

The LMG3624 is a 650-V 170-mΩ GaN power FET intended for switch-mode power-supply applications. The LMG3624 simplifies design and reduces component count by integrating the GaN FET and gate driver in a 8-mm by 5.3-mm QFN package.

Avnet Silica will be exhibiting power solutions from onsemi, ST, Renesas, Nexperia, Navitas Semiconductor, Diodes Inc and Monolithic Power Systems at PCIM Europe in Nuremberg (June 10-12).

The LMG2610 is a 650-V GaN power-FET half bridge intended for < 75-W active-clamp flyback (ACF) converters in switch mode power supply applications. The LMG2610 simplifies design, reduces component count, and reduces board space by integrating half bridge power FETs, gate drivers, bootstrap diode, and high-side gate-drive level shifter in a 9-mm by 7-mm QFN package.

Infineon announced two new CoolGaN product technologies, CoolGaN bidirectional switch (BDS) and CoolGaN Smart Sense.

At PCIM Europe 2024, Infineon Technologies will demonstrate how its latest semiconductor, software, and tooling solutions address the challenges of today's green and digital transformations.

650v 170mΩ GaN FET with integrated driver, protection and current sensing.

Electronic Specifier takes a look at the top 5 power products to have been released in May 2024.