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Semiconductor manufacturer Nexperia has announced a USD 200 million (approximately 184 million Euros) investment to develop the next generation of wide bandgap (WBG) semiconductors, including silicon carbide (SiC) and gallium nitride (GaN), and to enhance production infrastructure at its Hamburg site.

Mouser Electronics is now stocking the ACS37030 and ACS37032 current sensors from Allegro MicroSystems.

The LMG342xR030 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems.The LMG342xR030 integrates a silicon driver that enables switching speed up to 150 V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers.

Renesas Electronics, a premier supplier of advanced semiconductor solutions, announces that it has completed the acquisition of Transphorm, a global specialist in gallium nitride (GaN) power semiconductors, as of 20thJune 2024.

Texas Instruments (TI)and Delta Electronics will collaborate long term to create next-generation electric vehicle (EV) onboard charging and power solutions.

Infineon Technologies has launched its new CoolGaN Transistor 700 V G4 series, designed to deliver highly efficient power conversion up to 700 V.

Infineon Technologies AG has announced the closing of the acquisition of GaN Systems.

CML Micro has unveiled a Ka-band gallium nitride (GaN) power amplifier, offering a cost-effective solution for commercial high-volume satellite communication terminals.

With PCIM Europe 2024 now behind us, what better time to look back at the trends, innovations, and discussions happening within the power electronics industry.

The LMG3522R030-Q1 GaN FET with integrated driver and protections is targeting switch-mode power converters and enables designers to achieve new levels of power density and efficiency.