Search results for "transistor"
Better area, speed & power trade-offs with CoolCube technology
CEA-Leti today announced its first results towards the demonstration of CoolCube’s feasibility in FinFET technology on its 300mm production line and new CoolCube circuit designs that improve the trade off between area, speed and power. Key process steps developed on 300mm wafers show progress in closing the gap between the demonstration of a single device and taking the technology to fabrication.
Background suppression improves human proximity detection
A series of human detection proximity sensors have been unveiled by Panasonic Automotive & Industrial Systems which are 35% thinner (12.7 compared with 19.5mm) than previous versions and are also plug-and-play to ease installation. The MA Motion seriesfeature built-in trigonometric background suppression, so they are unaffected by changing scenes or by people passing by outside the detection range.
imec presents successors to FinFET for 7nm & beyond
At this week’s VLSI 2015 Symposium in Kyoto (Japan), imec reported new results on nanowire FETs and quantum-well FinFETs towards post-FinFET multi-gate device solutions.
GaN enables 50% transistor size reduction
GaN Systems has confirmed what it calls the ‘world’s smallest’ 650V, 15A gallium nitride transistor, in the wake of the 2015 PCIM conference in Nürnberg, Germany. With a footprint of just 5.0x6.5mm, the GS66504B - one of a family of 650V devices that spans 7 to 200A - is 50% smaller than competing devices.
Fanless embedded system withstands rugged industrial environments
IBASE Technology has announced the fanless CSB200-897 system, which comes with the IB897 3.5" SBC. The unit integrates the Intel Atom E3845 processor, featuring 22nm microarchitecture and 3-D Tri-Gate transistors. The reliable 1.91GHz processor allows the CSB200-897 to operate from -30 to +60°C in harsh industrial environments for 24/7 operation.
Surface mount GaN transistor reduces power consumption
Claimed to be the industry’s smallest enhancement mode 600V GaN transistor, is offered in the X-GaN package by Panasonic.
Wideband transistor extends GaN portfolio
The NPT2022, launched by MACOM at IMS in Phoenix, is a wideband transistor optimised for DC-2GHz operation and built using a proprietary Gallium Nitride (GaN) on Silicon (Si) process. The device supports CW, pulsed and linear operation, boasting output levels up to 100W or 50dBm. This device provides customers 20 dB of gain and 60% drain efficiency at 900MHz when operated at 50V.
High power amplifiers cover UHF, VHF, L, S & C bands
Covering UHF, VHF, L, S and C frequency bands, Pasternack has announced a portfolio of solid state, high power, coaxial packaged RF amplifiers. The devices are designed for use in applications such as electronic warfare, instrumentation, military communications, radar, SATCOM, telecomms, data links and medical devices.
Brushed DC motor driver exhibits 0.34Ω RDS(on)
Toshiba has launched a small motor driver IC for DC brushed motors. While primarily targeted at vehicle engine applications, such as electronic throttle and valve control, the TB9051FTG is also suitable for control of on-board systems operating at up to 5A, such as control of wing mirrors and locks for car boots. The TB9051FTG is a single channel H-Bridge that supports two power supplies (VBAT and VCC).
Scaling up Servers
With massive projected growth attributed to the Internet of Things, how are semiconductor vendors keeping up with demands for capacity and performance from internet and data centre infrastructure? Sally Ward-Foxton finds out.