Search results for "transistor"
Couplers target defence, aerospace applications
The range of Xinger couplers for aerospace and defence applications from Anaren is now being shipped by Richardson Electronics along with full design support. Offering a wide bandwidth range, high isolation/directivity, low insertion loss and ENIG plating finish, these high-reliability hybrid and directional couplers are ideal for aerospace and defense applications where size, weight and power (SWAP) are critical.
GaN nanoelectronics-transistor blocking voltage exceeds 1kV
Low resistance resulting in reduced power consumption and heating have attracted researchers to study GaN systems for nanoelectronics. Previous work has focused on laterally oriented GaN and AlGaN transistors, which readily provide a high mobility and low resistance. However, these structures are limited in terms of the break-down and threshold voltage that can be achieved without compromising device size, which may make them unsuitable for autom...
PA design forum tackles modelling, characterisation
The NI/AWR Design Environment will be featured in the second annual National Instruments-sponsored RF/microwave power amplifier (PA) design forum at European Microwave Week 2015 in Paris on September 9 from 9:30 a.m. to 1:30 p.m. This design forum, entitled, “Device Technologies, Characterisation, Modelling and End-Use Applications,” will focus on the device technologies, characterisation, modelling and end-use applications of RF and ...
Colston Hall & Renishaw join forces to launch Music Tech Lab
Bristol school children will be given the chance to design and build their own digital music instruments, thanks to a new three year partnership between Bristol Music Trust and global engineering company Renishaw. The two organisations have come together with hi-tech educators Conductive Music to create an inspiring education programme that combines engineering, maths and music, giving 7-11 year olds the opportunity to learn about music technolog...
Strange magnetic behaviour has quantum computing potential
An exotic kind of magnetic behavior, driven by the mere proximity of two materials, has been analysed by a team of researchers at MIT and elsewhere, using a technique called spin-polarised neutron reflectometry. They say the finding could be used to probe a variety of exotic physical phenomena, and could ultimately be used to produce key components of future quantum computers.
Power transistor sales expected to grow by 6% in 2015
Power transistor sales are forecast to grow 6% in 2015 and set a new record high of $14.0bn following a strong recovery in 2014, which drove up dollar volumes by 14% after two consecutive years of decline, according to IC Insights’ 2015 O S-D Report—A Market Analysis and Forecast for Optoelectronics, Sensors/Actuators, and Discretes. In the last six years, power transistor sales have swung wildly, overshooting and undershooting end-us...
Advanced low-power SRAM improves reliability & backup battery life
Renesas has launched two series of Advanced Low Power SRAM, the leading low-power SRAM designed for enhanced reliability and longer backup battery life for factory automation, industrial equipment and smart grid applications. Fabricated using the 110nm process, the RMLV1616A series of 16Mb devices and the RMWV3216A series of 32Mb devices feature an innovative memory cell technology that dramatically improves reliability and contributes to longer ...
RF power amplifiers target industrial radios
Two RF power amplifiers that can be operated at 3.6 or 7.5V and are targeted for applications where power for radio range and efficiency for battery life are key design requirements have been introduced by Freescale Semiconductor.
MMIC power amp eliminates need for RF switches
Analog Devices has introduced the HMC1127 and HMC1126 MMIC distributed power amplifiers. Covering the frequency range of 2-50GHz, these power amplifier die simplify system design and improve performance by eliminating the need for RF switches between frequency bands. Each amplifier incorporates I/Os that are internally matched to 50Ω, facilitating easy integration into multi-chip modules.
GaN demos 60A power transistor in China for first time
GaN Systems last week showcased the latest addition to its successful range of E-mode GaN-on-Silicon high power transistors on Booth 4D18 at PCIM Asia in Shanghai. Based on three core proprietary technologies, the GS65516T GaN high-power enhancement-mode device boasts the highest current capability on the market at 60A.