Search results for "SiC"
Indium Corporation to present at PCIM Europe
Indium Corporation experts will share their technical insight and knowledge on a variety of industry-related topics throughout PCIM Europe, June 11-13, in Nuremberg, Germany.
Guerrilla RF acquires Gallium Semiconductor's GaN device portfolio
Guerrilla RF (GUER) has finalised the acquisition of Gallium Semiconductor's entire portfolio of GaN power amplifiers and front-end modules.
Trends and challenges in the era of wide bandgap semiconductors for power electronics
Keysight recently held a webinar titled: “Overcoming Design Challenges in the Era of Wide Bandgap Semiconductors,” in which valuable insights on the trends and challenges of power electronics were explored.
Littelfuse unveils IX4352NE low-side gate driver
Littelfuse has announced the launch of the IX4352NE low-side SiC MOSFET and IGBT gate driver.
Infineon provides products for Xiaomi’s new SU7 smart EV
Infineon Technologies AG, a global semiconductor specialist in power systems and IoT, will provide silicon carbide (SiC) power modules HybridPACK Drive G2 CoolSiC and bare die products to Xiaomi EV for its recently announced SU7 until 2027.
SemiQ launches KGD program
SemiQ, a provider of silicon carbide (SiC) solutions for high-performance and high-voltage applications, has launched a known-good-die (KGD) screening programme.
SiC FET lowers conduction losses
Wide Band Gap Devices like Silicon Carbide (SiC) Field Effect Transistors (FETs) are more and more considered for High-Voltage and High Power applications because of the capability of higher switching frequencies and thus better efficiency than common Silicon FETs.
Texas Instruments brings you the latest in Control Drive
Here, you’ll find a selection of the latest news, products, and articles from Texas Instruments focused on Control Drive.
TMS320F28388D by Texas Instruments
The TMS320F2838x (F2838x) is a member of the C2000 real-time microcontroller family of scalable, ultra-low latency devices designed for efficiency in power electronics, including but not limited to: high power density, high switching frequencies, and supporting the use of GaN and SiC technologies.
ROHM’s SiCrystal and STM expand wafer agreement
ROHM and STMicroelectronics have announced the expansion of the existing multi-year, long-term 150mm silicon carbide (SiC) substrate wafers supply agreement with SiCrystal, a ROHM group company.