Search results for "SiC"

Infineon Technologies has introduced the first devices in a family of Gallium Nitride on Silicon Carbide (GaN-on-SiC) RF power transistors at this year's European Microwave Week. As part of Infineon’s GaN portfolio, the devices allow manufacturers of mobile base stations to build smaller, more powerful and more flexible transmitters.

A wideband transistor optimised for DC to 2.7GHz operation and built using proprietary 4th generation GaN on Silicon (GaN on Si) process is sampling today. The device was announced by MACOM at European Microwave Week in Paris. This GaN on Si HEMT D-Mode transistor is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/UHF/L/S-band radar.

Cree has announced that Wolfspeed is the latest name for the Power and RF division of Cree. The company announced in May that it would separate the business into a standalone company. Founded upon the mission to liberate power and wireless systems from the limitations of silicon, Wolfspeed enters the marketplace as a well-established, entrepreneurial growth company with a focused team, a profitable business and more than 28 years of industry-lead...

The U.S. Air Force has awarded a follow-on contract of $4.1m to Cree. This new funding will enable the qualification of a high-performance power electronic module developed for the F-35 Joint Strike Fighter in the company’s Fayetteville, Ark. facilities.

Industry 4.0 is on its way, in electronics production as well as in every other branch of industry. The industrial IoT is fundamentally changing the prerequisites for production and electronics manufacturing. The transformation to the networked factory means that production facilities and value chains will be linked to one another digitally in the future. That has plenty of advantages, but it also leaves companies facing some major challenges. To...

Cree is delivering five technical presentations at the seventh annual IEEE Energy Conversion Congress and Expo (ECCE 2015), which will take place from 20th to 24th September, 2015 at the Palais des Congrès in Montreal. ECCE 2015 will provide practicing engineers, researchers, entrepreneurs and other professionals from the electrical and electromechanical energy conversion industries with a wide variety of interactive and multidisciplinary ...

Featuring current ratings ranging from 2 to 120A, and on resistance as low as 24mΩ, the 650V X2-Class power MOSFETs have been introduced by IXYS. The devices are particularly suitable for high-efficiency, high-speed power switching applications.

Primarily by enabling new products, the thin flexible batteries market is set to be worth $400m in 2025 mainly. By Raghu Das, CEO, IDTechEx.

In a competitive landscape, Yole Développement points out the serenity of the Wide Band Gap (WBG) market and the confidence of its players: WBG companies are slowly but surely reshaping the industry and accelerate the market adoption with numerous strategic mergers and acquisitions (Cree, Infineon Technologies…) and the development of disruptive solutions.In its latest technology and market analysis, 'GaN & SiC for power electro...

A new discrete GaN on SiC HEMT from TriQuint / Qorvo is now being shipped by Richardson RFPD with full design support capabilities. The 30W (P3dB) T2G4003532 operates from DC to 3.5GHz and is constructed with TriQuint’s TQGaN25 production process, which features advanced field plate techniques to optimise power and efficiency at high drain bias operating conditions.