Search results for "SiC"
All-Purpose Proximity Sensing from SICK in One Second Flat
ACHIEVING instantly reliable proximity sensing is simple with the single-click installation of the SICK IQG sensor. With its one-second mount and 40 x 40mm cubic construction, the IQG is an all-purpose and cost-effective inductive sensor that is easy-to-switch in countless automation, conveying and materials handling applications.
ROHM semiconductor to exhibit at PCIM 2016
At the occasion of PCIM in Nuremberg from May 10-12th, 2016, ROHM Semiconductor showcase its latest power product novelties for high-speed switching and high power performance, at the same time meeting the need for greater energy savings and higher efficiency (Hall 9 - Booth 316).
SiC diode has low EMI for solar inverters
Switching performance and low EMI combine in the 1,200V SiC diode from Fairchild. It is designed for high-speed solar inverters and industrial applications.
X-FAB drives industry’s transition into 6" SiC production
X-FAB Silicon Foundries is putting itself at the vanguard of wide-bandgap semiconductor production by announcing the availability of its silicon carbide (SiC) offering from its wafer fab in Lubbock, Texas. Thanks to major internal investments in the conversion of capital equipment, as well as the support provided by the PowerAmerica Institute at NC State University, X-FAB Texas has heavily upgraded its manufacturing resources in order to make the...
Wolfspeed to exhibit SiC power portfolio at APEC 2016
Wolfspeed, A Cree Company, will be showcasing its industry-leading solutions at this year’s Applied Power Electronics Conference and Exposition (APEC 2016). The annual conference, which will take place March 20 – 24th in Long Beach, Calif., is globally recognised as the leading North American technical gathering dedicated to the applied power electronics industry. In addition to their exhibition, Wolfspeed engineers will be presenting...
Determining DC/DC converter requirements for gate drive applications
How to design ‘well-behaved’ high side gate drive circuits, by Paul Lee, Murata Power Solutions. The MGJ series, for example, has options for +15 or +20V. IGBTs and GaN MOSFETS will be fully ‘on’ with 15V drive but typical SiC MOSFETS may need closer to 20V for full enhancement.
ULP graphene sensor/switch combo detects home air pollution
Scientists from the University of Southampton, in partnership with the Japan Advanced Institute of Science and Technology (JAIST), have developed a graphene-based sensor and switch that can detect harmful air pollution in the home with very low power consumption.The sensor detects individual CO2molecules and VOC gas molecules found in building and interior materials, furniture and even household goods, which adversely affect our living in modern ...
ROHM Semiconductor to exhibit at Hannover Messe
ROHM Semiconductor will be exhibiting at Hannover Messe 2016, which will be held in Hannover, Germany, from 25th to 29th April. For its first exhibit at the trade fair, ROHM will go in with a theme of ‘Endless Possibilities’ – through which the company plans to introduce key devices to contribute to the technological innovation for Industry 4.0/IoT.
STMicroelectronics exhibit at electronica China 2016
STMicroelectronics is showcasing its latest technologies and products for smart driving, smart environments and smart things at electronica China in Hall E2 Booth 2102 at the New International Expo Center, Shanghai, 15th to 17th March 2016.
1GHz optically isolated measurement system features at APEC
The new IsoVu technology from Tektronix will feature at the APEC 2016 show (March 20-24) in Long Beach, California. It will offer complete galvanic isolation between a device under test (DUT) and an oscilloscope through the use of electro-optical sensors. Tektronix says it will be the industry’s first measurement solution capable of accurately resolving high bandwidth differential signals in the presence of large common mode voltage.