Search results for "SiC"

Cambridge GaN Devices (CGD) is partnering with Qorvo to develop a reference design and evaluation kit (EVK) that showcases GaN for motor control applications.

Marktech Optoelectronics has been named a finalist in the Cleantech/Sustainability category of the 2024 Best of Sensors Awards for ‘235nm and 255nm Deep UVC LEDs and Detectors’.

NXP Semiconductors has announced a collaboration with ZF on next-generation SiC-based traction inverter solutions for EVs.

Infineon has introduced its new industrial CoolSiC MOSFETs 650V G2 in TOLT and Thin-TOLL packages.

STMicroelectronics announces a new high-volume 200mm silicon carbide manufacturing facility for power devices and modules, as well as test and packaging, to be built in Catania, Italy.

Toshiba will bring solutions that support customers’ goals in reducing their CO2 footprint at the PCIM 2024 conference and exhibition (Nuremberg 11th – 13th June).

WeEn Semiconductors will be exhibiting the company’s latest highly efficient, high-power density silicon carbide (SiC) technologies, automotive grade power devices and highly reliable IGBTs at PCIM Europe 2024 in Nuremberg from June 11-13, 2024.

With the increasing power requirements of artificial intelligence (AI) processors, server power supplies (PSUs) must deliver power without exceeding the defined dimensions of the server racks.

The influence of artificial intelligence (AI) is driving up the energy demand of data centres across the globe.

The UCC21732 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. The UCC21732 has up to ±10A peak source and sink current.