Search results for "transistor"
RF power transistor operates at up to 500MHz
Availability and full design support capabilities for a new LDMOS transistor from NXP Semiconductors have been announced by distributor Richardson RFPD. The MRF1K50H builds on the success of NXP's 1250 W MRFE6VP61K25H, delivering 1500W CW at 50V, along with superior ruggedness and thermal performance
PFC uses a two-phase, interleaved boost-type conversion architecture
A manufacturer of power semiconductors and ICs for energy efficiency, power management, medical, transportation and consumer applications, IXYS, has announced the IXRD1004 - High Power Two-Phase Digital Power Factor Correction (PFC) reference design. It is based on Zilog’s 8-bit Z8F6481 microcontroller, a member of the Z8 Encore! XP F6482 series of microcontrollers, and IXYS power transistors and rectifiers.
Improving the commercial viability of printed circuits
Using Raman spectroscopy, the UK’s National Physical Laboratory (NPL) has developed a new, non-destructive method of measuring the three dimension orientation of molecules in an organic semiconductor transistor. This will create a new, faster and more flexible method of measuring the efficiency of electrical conductivity in a printed circuit.
Isolated gate drivers offer protection for inverters and motor drives
Silicon Labs has expanded its ISOdriver portfolio with a family of isolated gate drivers designed to protect sensitive Insulated-Gate Bipolar Transistor (IGBT) switches in power inverter and motor drive applications. The new Si828x ISOdriver family provides industrial-grade isolation (5kVrms withstand), best-in-class feature integration including the following:
SiC high voltage switch developed
Researchers at North Carolina State University have created a high voltage and high frequency silicon carbide (SiC) power switch that could cost much less than similarly rated SiC power switches. The findings could lead to early applications in the power industry, especially in power converters like medium voltage drives, solid state transformers and high voltage transmissions and circuit breakers.
Materials with repeating spatial patterns enable oscillations
A theory developed by the late Stanford professor and Nobel laureate Felix Bloch suggested that a specially structured material that allowed electrons to oscillate in a particular way might be able to conduct terahertzsignals.Now, decades after Bloch's theory, Stanford physicists may have developed materials that enable these theorised oscillations, someday allowing for improvements in technologies from solar cells to airport scanners. The group ...
UltrasCMOS FET driver enables next-generation applications
Richardson RFPD is now offering availability and full design support capabilities for a new UltraCMOS FET driver from Peregrine Semiconductor. The PE29100 integrated high-speed driver is designed to control the gates of external power devices, such as GaN Systems’ E-HEMT (enhancement-mode high electron mobility transistor) gallium nitride FETs.
GaN on SiC HEMTs designed for defence applications
Availability and full design support capabilities are now being offered by Richardson RFPD for four new GaN on SiC high-electron-mobility transistors from Qorvo.The QPD1000 is a 15 W (P3dB), 50Ω-input matched discrete GaN on SiC HEMT that operates from 30MHz to 1.215GHz.
European project to support flexible semiconductor adoption in Asia
A €1.8million grant has been secured by SmartKem, to support the industrialisation and technology transfer of its semiconductor platform to display makers in Asia.
DC/DC converters provide 9W from a SIP-8 package
Powersolve has just introduced what its says is the world’s first SIP-8 packaged DC/DC converter series to provide an isolated and regulated output voltage with up to 9W of output power.Models in the Tracopower TMR9 series are available with 2:1 (TMR 9) or 4:1 (TMR 9WI) input ranges and cover nominal inputs of 12, 24 and 48VDC. Single and dual output voltages of 3.3 to 24VDC are available within the range.