Search results for "transistor"
1900 W LDMOS power transistor added to rugged line-up
Ampleon announced the BLF189XR, the latest member of its renowned family of extremely rugged “XR” LDMOS power transistors designed specifically for use in high power amplifiers operating in the 10 – 500 MHz. Suiting use in a wide variety of broadcast and industrial applications, and capable of operating with a VSWR up to 65:1, the device is rated to deliver 1,700 W CW or 1,900 W pulsed.
Parametric test solution targets power semiconductors
The Keithley S540 Power Semiconductor Test System, a fully-automated, 48 pin parametric test system for wafer-level testing of power semiconductor devices and structures up to 3kV has been released by Tektronix. Optimised for use with the latest compound power semiconductor materials including silicon carbide (SiC) and gallium nitride (GaN), the fully integrated S540 can perform all high voltage, low voltage, and capacitance tests in a single pro...
Making silicon-germanium core fibres a reality
Glass fibres do everything from connecting us to the internet to enabling keyhole surgery by delivering light through medical devices such as endoscopes. But as versatile as today's fiber optics are, scientists around the world have been working to expand their capabilities by adding semiconductor core materials to the glass fibers.Now, a team of researchers has created glass fibres with single-crystal silicon-germanium cores.
Product portfolio has highly integrated motor controller
Microsemi announced it is sampling the LX7720 radiation-tolerant motor controller, the newest member of its Space System Manager (SSM) product family. As the industry’s first highly integrated radiation-tolerant motor control IC, the LX7720 significantly reduces weight and board space relative to conventional discrete motor control circuits, offering a unique solution for satellite manufacturers sensitive to area and weight challenges.
Ultralow power transistors could function without battery
A newly-developed form of transistor opens up a range of new electronic applications including wearable or implantable devices by drastically reducing the amount of power used. Devices based on this type of ultralow power transistor, developed by engineers at the University of Cambridge, could function for months or even years without a battery by 'scavenging' energy from their environment.
LOPEC 2017 looks set to impress
With the printed electronics industry now moving quickly from theory and ideas to real solutions, applications and products, LOPEC 2017 is set to provide conference delegates and exhibition visitors alike with the chance to see just how far this technology has come in the past decade. LOPEC will take place at the end of March next year.
Diamonds make a device cooler
Powerful electronic components can get very hot. When many components are combined into a single semiconductor chip, heating can become a real problem. An overheating electronic component wastes energy and is at risk of behaving unpredictably or failing altogether. Consequently, thermal management is a vital design consideration.This becomes particularly important in devices made from gallium nitride.
Electron-phonon interactions affect heat dissipation
In the coming years, as more transistors are packed into ever smaller areas within computer chips, MIT engineers say cellphones, laptops, and other electronic devices may face a higher risk of overheating, as a result of interactions between electrons and heat-carrying particles called phonons.The researchers have found that these previously underestimated interactions can play a significant role in preventing heat dissipation in microelectronic ...
Compact high-voltage drive transistor arrays
A series of next-generation output transistor arrays that feature a DMOS FET type sink output has been announced by Toshiba Electronics Europe.The TBD62183AFNG and TBD62183AFWG are ideal for level shift applications and for directly controlling photocouplers, LEDs, and relays that require high-voltage input signals.
Keynote address to focus on high current power transistors
Co-founder and Chief Technology Officer of GaN Systems, John Roberts, will deliver the keynote address at the 4thIEEE Power Electronics Society Workshop on Wide bandgap Power Devices and Applications (WiPDA).