Search results for "Vishay"

Vishay Intertechnology has announced a series of enhanced high-current-density PowerBridge rectifiers with current ratings of 10A to 25A and maximum peak reverse voltage ratings of 600V to 1000V. Compared to larger-size bridge rectifiers on the market, the advanced thermal construction of the PowerBridge devices allows heat to dissipate more efficiently. The PowerBridge rectifiers are thus able to provide the same power ratings as larger package...

Vishay introduces a new series of enhanced high-current-density PowerBridge rectifiers with current ratings of 30 A to 45 A, maximum peak reverse voltage ratings of 600 V to 1000 V, and a high case dielectric strength of 1500 V. The series’ 45-A devices are the industry’s first single in-line bridge rectifiers in the PowerBridge package, which features a body size of 30 mm by 20 mm with a 3.8-mm profile.

Vishay has expanded its family of n-channel TrenchFET power MOSFETs in the thermally enhanced PowerPAK SC-75 package to offer a VDS range from 8 V to 30 V. The devices released today include the industry’s first 30-V device in the 1.6-mm by 1.6-mm footprint area, and a 20-V MOSFET with the industry’s lowest on-resistance.

Vishay Intertechnology, Inc. today released a series of low-profile surface-mount rectifiers with ESD protection to 25 kV. The new MSE1Px devices are offered in an eSMP series MicroSMP package with footprint dimensions of just 2.5 mm by 1.3 mm with a height profile of 0.65 mm. In addition to their ESD capabilities, the new devices feature a rugged maximum junction temperature of 175 °C and an MSL moisture sensitivity level of 1.

Vishay Intertechnology, Inc. today announced two new devices in the microBuck™ family of integrated synchronous buck regulators. The 4-A SiC413 and 10-A SiC417 are dc-to-dc converter solutions featuring an advanced controller IC with gate drivers, two PWM-optimized n-channel MOSFETs (high and low side), and a bootstrap diode in a standalone buck regulator configuration.

Vishay has expanded its family of Gen III TrenchFET power MOSFETs down to 12 V with the release of a new n-channel device offering the industry’s lowest on-resistance and on-resistance times gate charge for a device with this voltage rating. The 12-V SiR494DP features a maximum on-resistance of 1.2 mΩ at a 10-V gate drive and 1.7 mΩ at a 4.5-V gate drive. On-resistance times gate charge, a key figure of merit (FOM) for MOSFETs in dc-t...

Vishay Intertechnology, Inc. today introduced the first p-channel TrenchFET Gen III power MOSFET in the chipscale MICRO FOOT package. The 20-V device features the industry’s lowest on-resistance for a p-channel MOSFET in the 1.5-mm by 1-mm footprint area.

Vishay introduced new 40 V and 60 V n-channel TrenchFET® power MOSFETs with the industry's lowest on-resistance and on-resistance times gate charge figures of merit (FOM) for devices with these voltage ratings in the SO-8 or PowerPAK® SO-8 packages.

Vishay has introduced a new 8 V p-channel TrenchFET power MOSFET featuring the industry's lowest on-resistance for a p-channel device in the 1.6 mm by 1.6 mm footprint area with a profile under 0.8 mm. In addition, the SiB437EDKT is the only such device to offer an on-resistance rating down to 1.2 V.

Vishay has announced what it says is the industry’s first high-performance multilayer ceramic chip antennas for mobile devices to cover the entire UHF band from 470 MHz to 860 MHz. Utilizing Vishay's unique materials and manufacturing technologies, the new Vishay Vitramon chip antennas comply with the MBRAI standard while maintaining small outlines of 35 mm by 5 mm by 1.2 mm for the VJ 3505, and 10.5 mm by 15.5 mm by 1.2 mm for the VJ 6040.