Technology provides 28V operation with superior power density

NP25 is a 0.25µm-gate GaN-on-SiC process, and offers users the flexibility to produce both fully integrated amplifier products as well as custom discrete transistors. In production since 2014, the optimised 0.25µm process offers enhanced RF performance with fast switching time, higher gain and increased power added efficiency for demanding power applications through Ku-band.

Optimised NP25 transistors exhibit more suitable DC and RF IV characteristics and provide 2dB higher maximum stable gain. Increased gain leads directly to higher power density and PAE under a range of tuning and bias conditions. This performance-optimised process is fully qualified and supported with a comprehensive design kit and transistor models.

The WIN NP25 technology is fabricated on 4” silicon carbide substrates and operates at a drain bias of 28V. At 10GHz, NP25 provides saturated output power of 5W/mm with 19dB linear gain and over 65% power added efficiency. These performance metrics make the NP25 process well suited for a variety of high power, broad bandwidth and linear transmit functions in the radar, satellite communications, and wireless infrastructure markets.

NP25 sample kits are available and can be obtained by contacting WIN’s regional sales managers.